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1. (WO2010082923) PROGRAMMABLE BIPOLAR ELECTRONIC DEVICE
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CLAIMS

WHAT IS CLAIMED IS:

1. A configurable memristive device (300) for regulating an electrical signal comprises: a memristive matrix (350), said memristive matrix (350) containing a first dopant species; an emitter electrode (320), a collector electrode (310) and a base electrode (340), said electrodes being in electrical contact with said memristive matrix; and a mobile dopant species, said mobile dopant species being contained within a central region (360) contiguous with said base electrode (310), said mobile dopant species moving within said memristive matrix (350) in response to a programming electrical field.

2. The device of claim 1 , wherein said first dopant species is also a mobile dopant species, said first dopant species moving within said memristive matrix (350) in response to a programming electrical field.

3. The device of claim 2, wherein an electrical signal is regulated by repositioning said first dopant species.

4. The device of claim 1 wherein a programming voltage is applied to said memristive matrix (350) such that said central region (360) containing said mobile dopant species extends across said memristive matrix (350) and divides said memristive matrix (350) into two portions.

5. The device of claim 4, wherein said electrical signal is modulated by applying a control voltage to said base electrode (340) such that a depletion zone between said central region (360) and a region (380) doped by said first dopant species is varied.

6. The device of claim 5, wherein said control voltage does not substantially reposition said mobile dopants.

7. The device of claim 1 , wherein said memhstive matrix (350) is titanium dioxide.

8. The device of claim 7, wherein said first dopant is one of: an n-type dopant and a p-type dopant; said n-type dopant comprises one of: oxygen vacancies and beryllium ions; said p-type dopant comprises one of: magnesium ions and calcium ions.

9. The device of claim 1 , wherein said mobile dopant is one of: an n-type dopant and a p-type dopant; and said mobile dopant having an opposite charge from said first dopant.

10. The device of claim 1 , further comprising a fourth electrode (430), said programming voltage being applied across said base electrode (440) and said fourth electrode (430); said mobile dopant forming a central region (460) which divides said memhstive matrix (450) into two portions and extends from said fourth electrode (430) to said base electrode (440).

11. The device of claim 1 , further comprising a reservoir (430), said reservoir (430) containing said mobile dopant prior to application of said programming voltage.

12. A method of configuring and using a memristive device comprising: applying a programming electrical field across a memristive matrix (350), said memristive matrix (350) being doped with a first dopant, said memristive matrix (350) being in electrical contact with an emitter electrode (320), a collector electrode (310), a base electrode (340) and a programming electrode (330); distributing a mobile dopant using said programming electrical field such that said mobile dopant forms a central doped region (360) which divides into two portions said memhstive matrix (350); and applying a control voltage to said base electrode (340) to regulate current flow between said emitter electrode (320) and said collector electrode (310).

13. The method of claim 12, further comprising tuning transistor characteristics of said memhstive device (300) by adjusting a distribution of at least one of said first dopant and said mobile dopant.

14. The method of claim 12, further comprising withdrawing said central doped region (360) by applying a programming electrical field which moves said mobile dopants to one side of said memristive matrix (350).

15. The method of claim 12, further comprising removing said programming electrical field after said mobile dopants form said central doped region (360) which divides said memristive matrix (350) into two portions; said mobile dopants remaining positionally stable within said memristive matrix (350) until another programming electrical field is applied.