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1. (WO2010082922) MEMRISTOR HAVING A TRIANGULAR SHAPED ELECTRODE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/082922 International Application No.: PCT/US2009/030827
Publication Date: 22.07.2010 International Filing Date: 13.01.2009
IPC:
H01L 27/115 (2006.01) ,H01L 21/8247 (2006.01) ,H01L 29/06 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8246
Read-only memory structures (ROM)
8247
electrically-programmable (EPROM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
Applicants:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; 1445 Compaq Center Drvie West Houston, Texas 77707, US (AllExceptUS)
PICKETT, Matthew [US/US]; US (UsOnly)
BORGHETTI, Julien [FR/US]; US (UsOnly)
Inventors:
PICKETT, Matthew; US
BORGHETTI, Julien; US
Agent:
LEE, Denise; Hewlett-Packard Company Intellectual Property Administration Mail Stop 35 P.O. Box 272400 Fort Collins, Colorado 80527-2400, US
Priority Data:
Title (EN) MEMRISTOR HAVING A TRIANGULAR SHAPED ELECTRODE
(FR) MEMRISTANCE DOTÉE D'UNE ÉLECTRODE DE FORME TRIANGULAIRE
Abstract:
(EN) A memristor includes a first electrode having a triangular cross section, in which the first electrode has a tip and a base, a switching material positioned upon the first electrode, and a second electrode positioned upon the switching material. The tip of the first electrode faces the second electrode and an active region in the switching material is formed between the tip of the first electrode and the second electrode.
(FR) La memristance selon la présente invention inclut une première électrode dotée d'une coupe transversale triangulaire, ladite première électrode étant pourvue d'une pointe et d'une base, un matériau de commutation disposé sur la première électrode, et une seconde électrode disposée sur le matériau de commutation. La pointe et la première électrode font face à la seconde électrode et une région active dans le matériau de commutation est formée entre la pointe de la première électrode et la seconde électrode.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US20110227030