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1. (WO2010082267) INSIDE REFORMING SUBSTRATE FOR EPITAXIAL GROWTH; CRYSTAL FILM FORMING ELEMENT, DEVICE, AND BULK SUBSTRATE PRODUCED USING THE SAME; AND METHOD FOR PRODUCING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/082267 International Application No.: PCT/JP2009/006633
Publication Date: 22.07.2010 International Filing Date: 04.12.2009
IPC:
H01L 21/20 (2006.01) ,B23K 26/00 (2006.01) ,C23C 16/02 (2006.01) ,C30B 29/38 (2006.01) ,C30B 33/00 (2006.01) ,H01L 21/205 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
B PERFORMING OPERATIONS; TRANSPORTING
23
MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K
SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26
Working by laser beam, e.g. welding, cutting, boring
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
02
Pretreatment of the material to be coated
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
38
Nitrides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33
After-treatment of single crystals or homogeneous polycrystalline material with defined structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
並木精密宝石株式会社 NAMIKI SEIMITSU HOUSEKI KABUSHIKI KAISHA [JP/JP]; 東京都足立区新田3丁目8番22号 8-22, Shinden 3-chome, Adachi-ku, Tokyo 1238511, JP (AllExceptUS)
株式会社ディスコ DISCO CORPORATION [JP/JP]; 東京都大田区大森北二丁目13番11号 13-11, Omori-kita 2-chome, Ota-ku, Tokyo 1438580, JP (AllExceptUS)
会田英雄 AIDA, Hideo [JP/JP]; JP (UsOnly)
青田奈津子 AOTA, Natsuko [JP/JP]; JP (UsOnly)
星野仁志 HOSHINO, Hitoshi [JP/JP]; JP (UsOnly)
Inventors:
会田英雄 AIDA, Hideo; JP
青田奈津子 AOTA, Natsuko; JP
星野仁志 HOSHINO, Hitoshi; JP
Priority Data:
2009-00629315.01.2009JP
Title (EN) INSIDE REFORMING SUBSTRATE FOR EPITAXIAL GROWTH; CRYSTAL FILM FORMING ELEMENT, DEVICE, AND BULK SUBSTRATE PRODUCED USING THE SAME; AND METHOD FOR PRODUCING THE SAME
(FR) SUBSTRAT DE REFORMAGE INTÉRIEUR POUR CROISSANCE ÉPITAXIALE, ÉLÉMENT DE FORMATION DE COUCHE DE CRISTAL, DISPOSITIF ET SUBSTRAT MASSIF PRODUIT À L'AIDE DE CE DERNIER, ET SON PROCÉDÉ DE PRODUCTION
(JA) エピタキシャル成長用内部改質基板及びそれを用いて作製される結晶成膜体、デバイス、バルク基板及びそれらの製造方法
Abstract:
(EN) Provided is a sapphire substrate mainly for epitaxial growth of a nitride semiconductor layer, wherein the shape and/or the amount of deflection of the substrate can be efficiently and accurately controlled; and the deflection of the substrate occurring when a film is formed is suppressed so that the deflection behavior of the substrate can be reduced.  Further, a film forming element for a nitride semiconductor layer, a nitride semiconductor device, and a nitride semiconductor bulk substrate, which are produced using the sapphire substrate, and a method for producing the same are provided. Pulse lasers are concentrated in the inside of the sapphire substrate through the polished surface of the sapphire substrate, to scan the inside of the sapphire substrate, and reforming region patterns are formed using multiphoton absorption performed by the pulse lasers, so that the shape and/or the amount of deflection of the substrate can be controlled.  When a nitride semiconductor layer is formed using the sapphire substrate, the deflection of the substrate occurring when a film is formed can be suppressed, and the deflection behavior of the substrate can be reduced.  Thus, the quality and the uniformity of the film can be improved, and the quality and the yield ratio of the nitride semiconductor device can be improved.
(FR) La présente invention a trait à un substrat de saphir principalement destiné à la croissance épitaxiale d'une couche semi-conductrice de nitrure, dont la forme et/ou la quantité de déviation du substrat peuvent être contrôlées de façon efficace et précise ; et la déviation du substrat se produisant lorsqu'une couche est formée est supprimée de telle sorte que le comportement de déviation du substrat peut être réduit. D'autre part, la présente invention a également trait à un élément de formation de couche destiné à une couche semi-conductrice de nitrure, à un dispositif à semi-conducteur de nitrure et à un substrat massif semi-conducteur de nitrure, qui sont produits à l'aide du substrat de saphir, et à leur procédé de production. Les lasers à impulsions sont concentrés à l'intérieur du substrat de saphir dans la surface polie du substrat de saphir, de manière à balayer l'intérieur du substrat de saphir, et des motifs de région de reformage sont formés à l'aide d'une absorption multiphoton effectuée par les lasers à impulsions, de manière à ce que la forme et/ou la quantité de déviation du substrat puissent être contrôlées. Lorsqu'une couche semi-conductrice de nitrure est formée à l'aide du substrat de saphir, la déviation du substrat se produisant lorsqu'une couche est formée peut être supprimée, et le comportement de déviation du substrat peut être réduit. De la sorte, la qualité et l'uniformité de la couche peuvent être améliorées, et la qualité et le taux de rendement du dispositif à semi-conducteur de nitrure peuvent être améliorés.
(JA) 【課題】主に窒化物半導体層のエピタキシャル成長用サファイア基板において、効率良く基板の反り形状及び/又は反り量を精密に制御することができ、且つ成膜中に生じる基板の反りを抑制し、基板の反り挙動を小さくすることのできるサファイア基板と、それを用いて作製される窒化物半導体層成膜体、窒化物半導体デバイス、窒化物半導体バルク基板及びそれらの製造方法を提供すること。 【解決手段】サファイア基板の内部に、前記サファイア基板の研磨面側を通してパルスレーザを集光し、走査し、前記パルスレーザによる多光子吸収を利用して改質領域パターンを形成し、サファイア基板の反り形状及び/又は反り量を制御する。本発明により得られたサファイア基板を用いて窒化物半導体層を形成すると、成膜中の基板の反りを抑制し、基板の反り挙動を小さくすることができるため、膜の品質及び均一性が向上し、窒化物半導体デバイスの品質及び歩留まりを向上できる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP2388802US20120018732CN102272891KR1020110129377IN6047/DELNP/2011