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1. (WO2010082266) ACOUSTIC WAVE SENSOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/082266 International Application No.: PCT/JP2009/006611
Publication Date: 22.07.2010 International Filing Date: 03.12.2009
IPC:
G01N 29/02 (2006.01) ,G01N 29/00 (2006.01) ,G01N 29/24 (2006.01) ,H01L 41/08 (2006.01) ,H01L 41/09 (2006.01)
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
29
Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
02
Analysing fluids
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
29
Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
29
Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
22
Details
24
Probes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
09
with electrical input and mechanical output
Applicants:
株式会社 村田製作所 Murata Manufacturing Co., Ltd. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP (AllExceptUS)
藤本耕治 FUJIMOTO, Koji [JP/JP]; JP (UsOnly)
岡口健二朗 OKAGUCHI, kenjiro [JP/JP]; JP (UsOnly)
Inventors:
藤本耕治 FUJIMOTO, Koji; JP
岡口健二朗 OKAGUCHI, kenjiro; JP
Agent:
山本俊則 YAMAMOTO, Toshinori; 大阪府大阪市北区西天満4丁目4番12号 近藤ビル810 新技術特許事務所 SHINGIJUTSU PATENT OFFICE, Room 810, Kondo-bldg., 4-12, Nishitenma 4-chome, Kita-ku, Osaka-shi, Osaka 5300047, JP
Priority Data:
2009-00435213.01.2009JP
Title (EN) ACOUSTIC WAVE SENSOR
(FR) DÉTECTEUR D'ONDE ACOUSTIQUE
(JA) 弾性波センサー
Abstract:
(EN) Disclosed is an acoustic wave sensor having high sensitivity and good reproducibility. The acoustic wave sensor comprises: (a) a piezoelectric substrate on one major surface side of which a liquid is arranged; (b) a first and second acoustic wave device (10, 20) formed on the major surface of the piezoelectric substrate and respectively having an IDT electrode (11, 21); and (c) a sensitive material which is arranged on a first region of the first acoustic wave device (10) where acoustic waves propagate, and changes in mass loading on the first acoustic wave device (10) due to a substance to be determined that is contained in the liquid.  The liquid arranged on the major surface side of the piezoelectric substrate is agitated by the second acoustic wave device (20), and the frequency detected by the first acoustic wave device (10) changes in accordance with the changes in the mass loading on the first acoustic wave device (10), said changes being caused by the sensitive material.  The second acoustic wave device (20) is formed so that a second region of the second acoustic wave device (20) where acoustic waves propagate is apart from the first region of the first acoustic wave device (10) where acoustic waves propagate.
(FR) La présente invention porte sur un détecteur d'onde acoustique ayant une sensibilité élevée et une bonne reproductibilité. Le détecteur d'onde acoustique comprend : (a) un substrat piézoélectrique sur un côté de surface principale sur lequel est disposé un liquide ; (b) des premier et second dispositifs à ondes acoustiques (10, 20) formés sur la surface principale du substrat piézoélectrique et pourvus respectivement d'une électrode IDT (11, 21) ; et (c) un matériau sensible qui est agencé sur une première région du premier dispositif à ondes acoustiques (10), dans laquelle se propagent des ondes acoustiques, et qui change de charge de masse sur le premier dispositif à ondes acoustiques (10) en raison d'une substance à déterminer qui est contenue dans le liquide. Le liquide disposé sur le côté de surface principale du substrat piézoélectrique est agité par le second dispositif à ondes acoustiques (20), et la fréquence détectée par le premier dispositif à ondes acoustiques (10) change en fonction des changements de la charge de masse sur le premier dispositif à ondes acoustiques (10), lesdits changements étant provoqués par le matériau sensible. Le second dispositif à ondes acoustiques (20) est formé de telle sorte qu'une seconde région du second dispositif à ondes acoustiques (20), dans laquelle se propagent des ondes acoustiques, est séparée de la première région du premier dispositif à ondes acoustiques (10) dans laquelle se propagent des ondes acoustiques.
(JA)  高感度、かつ再現性の良好な弾性波センサーを提供する。 (a)その一方主面側に液体が配置される圧電基板と、(b)圧電基板の一方主面上に形成され、それぞれIDT電極11,21を有する、第1及び第2の弾性波素子10,20と、(c)第1の弾性波素子10の弾性波が伝搬する第1の領域上に配置され、液体中に含まれる被測定物質によって第1の弾性波素子10への質量負荷を変化させる感応物質とを備える。圧電基板の一方主面側に配置された液体が第2の弾性波素子20によって攪拌され、感応物質による第1の弾性波素子10への質量負荷の変化に伴って第1の弾性波素子10によって測定される周波数が変化する。第2の弾性波素子20は、第2の弾性波素子20の弾性波が伝搬する第2の領域が、第1の弾性波素子の弾性波10が伝搬する第1の領域から離れて形成されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2010082266