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1. (WO2010081858) METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, BASED ON A SEMICONDUCTOR THIN FILM HAVING A DIRECT SEMICONDUCTOR MATERIAL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/081858 International Application No.: PCT/EP2010/050417
Publication Date: 22.07.2010 International Filing Date: 14.01.2010
IPC:
H01L 21/02 (2006.01) ,H01L 21/3063 (2006.01) ,C25F 3/12 (2006.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3063
Electrolytic etching
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
F
PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
3
Electrolytic etching or polishing
02
Etching
12
of semiconducting materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
INSTITUT FÜR SOLARENERGIEFORSCHUNG GMBH [DE/DE]; Am Ohrberg 1 31860 Emmerthal, DE (AllExceptUS)
GARRALAGA ROJAS, Enrique [ES/ES]; ES (UsOnly)
HENSEN, Jan [DE/DE]; DE (UsOnly)
PLAGWITZ, Heiko [DE/DE]; DE (UsOnly)
HAMPE, Carsten [DE/DE]; DE (UsOnly)
Inventors:
GARRALAGA ROJAS, Enrique; ES
HENSEN, Jan; DE
PLAGWITZ, Heiko; DE
HAMPE, Carsten; DE
Agent:
KÜHN, Ralph; Maiwald Patentanwalts GmbH Elisenhof, Elisenstraße 3 80335 München, DE
Priority Data:
10 2009 004 559.714.01.2009DE
Title (DE) VERFAHREN ZUM HERSTELLEN EINES HALBLEITERBAUELEMENTES, INSBESONDERE EINER SOLARZELLE, AUF BASIS EINER HALBLEITERDÜNNSCHICHT MIT EINEM DIREKTEN HALBLEITERMATERIAL
(EN) METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT, IN PARTICULAR A SOLAR CELL, BASED ON A SEMICONDUCTOR THIN FILM HAVING A DIRECT SEMICONDUCTOR MATERIAL
(FR) PROCÉDÉ POUR PRODUIRE UN COMPOSANT SEMI-CONDUCTEUR, EN PARTICULIER UNE CELLULE PHOTOVOLTAÏQUE, SUR LA BASE D'UNE COUCHE MINCE SEMI-CONDUCTRICE COMPORTANT UNE MATIÈRE À SEMINCONDUCTEUR DIRECT
Abstract:
(DE) Es wird ein Verfahren zum Herstellen eines Halbleiterbauelementes, insbesondere einer Solarzelle, auf Basis einer Halbleiter-Dünnschicht beschrieben. Das Verfahren weist dabei die folgenden Schritte auf: Bereitstellen eines Halbleitersubstrates (1), wobei das Halbleitersubstrat (1) ein Material mit einem direkten Halbleiter aufweist; Ausbilden einer porösen Schicht (3) an einer Oberfläche des Halbleitersubstrat (1) durch elektrochemisches Ätzen des Halbleitersubstrates (1) in einer Ätzlösung (7); Abscheiden einer Halbleiterdünnschicht (5) auf der porösen Schicht (3); und Abtrennen der Halbleiterdünnschicht (5) von dem Halbleitersubstrat (1), wobei die poröse Schicht (3) als Sollbruchstelle dient. Auf diese Weise lässt sich in einem Halbleitersubstrat eine poröse Schicht erzeugen, die ein anschließendes Abtrennen der darauf abgeschiedenen Halbleiterdünnschicht und ein Wiederverwenden des Halbleitersubstrates im Rahmen eines Schichttransferverfahrens ermöglicht.
(EN) The invention relates to a method for producing a semiconductor component, in particular a solar cell, based on a semiconductor thin film. The method comprises the following steps: providing a semiconductor substrate (1), wherein the semiconductor substrate (1) comprises a material having a direct semiconductor; forming a porous film (3) on a surface of the semiconductor substrate (1) by electrochemically etching the semiconductor substrate (1) in an etching solution (7); depositing a semiconductor thin film (5) on the porous film (3); and separating the semiconductor thin film (5) from the semiconductor substrate (1), wherein the porous film (3) is used as a predetermined breaking point. In this way, a porous film can be produced in a semiconductor substrate, wherein the porous film enables the semiconductor thin film deposited thereon to be subsequently separated and the semiconductor substrate to be reused as part of a film transfer method.
(FR) L'invention concerne un procédé pour produire un composant semi-conducteur, en particulier une cellule photovoltaïque, sur la base d'une couche mince semi-conductrice. Ce procédé comprend les étapes suivantes: mettre à disposition un substrat semi-conducteur (1) comportant une matière contenant un semi-conducteur direct; former une couche poreuse (3) sur une surface du substrat semi-conducteur (1) par attaque électrochimique du substrat semi-conducteur (1) dans une solution d'attaque (7); déposer une couche mince semi-conductrice (5) sur la couche poreuse (3); et séparer la couche mince semi-conductrice (5) du substrat semi-conducteur (1), la couche poreuse (3) servant de point de rupture. Ainsi, dans un substrat semi-conducteur, on peut produire une couche poreuse qui peut être finalement séparée de la couche mince semi-conductrice déposée sur la couche poreuse, ce qui permet de réutiliser le substrat semi-conducteur dans le cadre d'un procédé de transfert de couche.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)