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1. (WO2010080815) ELECTROMAGNETIC RADIATION SENSOR AND METHOD OF MANUFACTURE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/080815 International Application No.: PCT/US2010/020237
Publication Date: 15.07.2010 International Filing Date: 06.01.2010
IPC:
H01L 27/146 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
Applicants:
ROBERT BOSCH GMBH [DE/DE]; Postfach 30 02 20 D-70442 Stuttgart, DE (AllExceptUS)
LIGER, Matthieu [FR/US]; US (UsOnly)
Inventors:
LIGER, Matthieu; US
Agent:
MAGINOT, Paul, J.; Maginot, Moore & Beck LLP Chase Tower 111 Monument Circle, Suite 3250 Indianapolis, IN 46204-5109, US
Priority Data:
12/349,86007.01.2009US
Title (EN) ELECTROMAGNETIC RADIATION SENSOR AND METHOD OF MANUFACTURE
(FR) CAPTEUR DE RAYONNEMENT ÉLECTROMAGNÉTIQUE ET PROCÉDÉ DE FABRICATION
Abstract:
(EN) A method of forming a semiconductor sensor (100) includes providing a substrate, (102) forming a reflective layer (104) on the substrate, forming a sacrificial layer on the reflective layer, forming an absorber layer (106) with a thickness of less than about 50 nm on the sacrificial layer, forming an absorber in the absorber layer integrally with at least one suspension leg, (110) and removing the sacrificial layer.
(FR) La présente invention concerne un procédé de fabrication d'un capteur à semi-conducteur qui comprend, dans un mode de réalisation, les étapes qui consistent à fournir un substrat, à former une couche réfléchissante sur le substrat, à former une couche sacrificielle sur la couche réfléchissante, à former une couche d'absorbeur dont l'épaisseur est inférieure à environ 50 nm sur la couche sacrificielle, à former d'un seul tenant un absorbeur et au moins un pied de suspension dans la couche d'absorbeur, et à éliminer la couche sacrificielle.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2386116JP2012514753CN102326255CA2748969MX2011007280KR1020110107366
BRPI1006124IN5552/CHENP/2011