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1. (WO2010080789) SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/080789 International Application No.: PCT/US2010/020199
Publication Date: 15.07.2010 International Filing Date: 06.01.2010
IPC:
H01L 21/027 (2006.01) ,G03F 7/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
BREWER SCIENCE INC. [US/US]; 2401 Brewer Drive Rolla, MO 65401, US (AllExceptUS)
LIN, Qin [CN/US]; US (UsOnly)
PULIGADDA, Rama [US/US]; US (UsOnly)
CLAYPOOL, James [US/US]; US (UsOnly)
GUERRERO, Douglas, J. [US/US]; US (UsOnly)
SMITH, Brian [US/US]; US (UsOnly)
Inventors:
LIN, Qin; US
PULIGADDA, Rama; US
CLAYPOOL, James; US
GUERRERO, Douglas, J.; US
SMITH, Brian; US
Agent:
BORNMAN, Tracy, L.; Hovey Williams LLP 10801 Mastin Blvd. Suite 1000 84 Corporate Woods Overland Park, KS 66210, US
Priority Data:
61/143,01307.01.2009US
Title (EN) SPIN-ON SPACER MATERIALS FOR DOUBLE- AND TRIPLE-PATTERNING LITHOGRAPHY
(FR) MATÉRIAUX D'ESPACEMENT AMOVIBLES POUR EFFECTUER UNE DOUBLE ET UNE TRIPLE FORMATION DE MOTIF PAR LITHOGRAPHIE
Abstract:
(EN) Novel double- and triple-patterning methods are provided. The methods involve applying a shrinkable composition to a patterned template structure (e.g., a structure having lines) and heating the composition. The shrinkable composition is selected to possess properties that will cause it to shrink during heating, thus forming a conformal layer over the patterned template structure. The layer is then etched to leave behind pre-spacer structures, which comprise the features from the pattern with remnants of the shrinkable composition adjacent the feature sidewalls. The features are removed, leaving behind a doubled pattern. In an alternative embodiment, an extra etch step can be carried out prior to formation of the features on the template structure, thus allowing the pattern to be tripled rather than doubled.
(FR) L'invention concerne de nouveaux procédés permettant d'effectuer une double et une triple formation de motif. Le procédé comprend l'application d'une composition rétractable sur une structure de matrice modelée (par exemple, une structure ayant des lignes) et le chauffage de la composition. La composition rétractable choisie possède des propriétés lui permettant de rétrécir pendant le chauffage, ce qui permet de former une couche enrobante sur la structure de matrice modelée. La couche est ensuite gravée pour laisser des pré-structures d'espacement, qui comprennent les caractéristiques du motif, la composition rétractable restante étant adjacente aux parois latérales des caractéristiques. Les caractéristiques sont éliminées pour laisser un motif doublé. Dans une variante de mode de réalisation, une étape supplémentaire de gravure peut être mise en œuvre avant la formation des caractéristiques sur la structure de matrice, pour ainsi permettre le triplement plutôt que le doublement du motif.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2374145JP2012514762KR1020110111473