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1. (WO2010080677) PENINSULA TRANSFER GATE IN A CMOS PIXEL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/080677 International Application No.: PCT/US2009/069755
Publication Date: 15.07.2010 International Filing Date: 29.12.2009
IPC:
H01L 27/146 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
Applicants:
OMNIVISION TECHNOLOGIES, INC. [US/US]; 4275 Burton Drive Santa Clara, CA 95054, US (AllExceptUS)
IHARA, Hisanori [JP/US]; US (UsOnly)
Inventors:
IHARA, Hisanori; US
Agent:
VINCENT, Lester J.; Blakely, Sokoloff, Taylor & Zafman LLP 1279 Oakmead Parkway Sunnyvale, CA 94085-4040, US
Priority Data:
12/641,13317.12.2009US
61/143,72109.01.2009US
Title (EN) PENINSULA TRANSFER GATE IN A CMOS PIXEL
(FR) GRILLE DE TRANSFERT EN PÉNINSULE DANS UN PIXEL CMOS
Abstract:
(EN) A pinned photodiode structure (400) with peninsula- shaped transfer gate (430, 430b, 430a) which decrease the occurrence of a potential barrier between the photodiode (410) and the floating drain(440), prevents loss of full well capacity (FWC) and decreases occurrences of image lag.
(FR) L'invention porte sur une structure de photodiode complètement appauvrie (400) avec une grille de transfert en forme de péninsule (430, 430b, 430a) qui diminue l'apparition d'une barrière de potentiel entre la photodiode (410) et le drain flottant (440), qui empêche la perte de capacité de remplissage (FWC) et qui diminue les apparitions de retard d'image.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN102576714