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1. (WO2010080446) MICROCRYSTALLINE SILICON ALLOYS FOR THIN FILM AND WAFER BASED SOLAR APPLICATIONS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/080446 International Application No.: PCT/US2009/068305
Publication Date: 15.07.2010 International Filing Date: 16.12.2009
IPC:
H01L 31/042 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, CA 95054, US (AllExceptUS)
SHENG, Shuran [CA/US]; US (UsOnly)
CHAE, Yongkee [KR/US]; US (UsOnly)
Inventors:
SHENG, Shuran; US
CHAE, Yongkee; US
Agent:
PATTERSON, B. Todd; Patterson & Sheridan, L.L.P. 3040 Post Oak Blvd., Suite 1500 Houston, Texas 77056-6582, US
Priority Data:
61/139,39019.12.2008US
Title (EN) MICROCRYSTALLINE SILICON ALLOYS FOR THIN FILM AND WAFER BASED SOLAR APPLICATIONS
(FR) ALLIAGES DE SILICIUM MICROCRISTALLIN POUR APPLICATIONS SOLAIRES BASÉES SUR DES FILMS MINCES ET DES TRANCHES
Abstract:
(EN) A method and apparatus for forming solar cells is provided. Doped crystalline semiconductor alloys including carbon, oxygen, and nitrogen are used as light-trapping enhancement layers and charge collection layers for thin-film solar cells. The semiconductor alloy layers are formed by providing semiconductor source compound and a co-component source compound to a processing chamber and ionizing the gases to deposit a layer on a substrate. The alloy layers provide improved control of refractive index, wide optical bandgap and high conductivity.
(FR) La présente invention concerne un procédé et un appareil pour former des cellules solaires. Des alliages semi-conducteurs cristallins dopés qui comprennent du carbone, de l'oxygène et de l'azote sont utilisés en tant que couches d'optimisation de captage de lumière et en tant que couches de collecte de charge pour des cellules solaires à film mince. Les couches d'alliage semi-conducteur sont formées en fournissant un composé source semi-conducteur et un composé source co-composant à une chambre de traitement et en ionisant les gaz pour déposer une couche sur un substrat. Les couches d'alliage fournissent un contrôle optimisé de l'indice de réfraction, une large bande interdite optique et une haute conductivité.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2359411JP2012513125CN102272950KR1020110106889