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1. (WO2010080352) SEMICONDUCTOR CORE, INTEGRATED FIBROUS PHOTOVOLTAIC DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/080352 International Application No.: PCT/US2009/067825
Publication Date: 15.07.2010 International Filing Date: 14.12.2009
IPC:
H01L 31/0352 (2006.01) ,H01L 31/048 (2006.01) ,H01L 31/052 (2006.01) ,H01L 21/22 (2006.01) ,H01L 21/225 (2006.01) ,G02B 6/42 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0352
characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
048
encapsulated or with housing
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
052
with cooling, light-reflecting or light- concentrating means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22
Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
225
using diffusion into, or out of, a solid from or into a solid phase, e.g. a doped oxide layer
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
6
Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
24
Coupling light guides
42
Coupling light guides with opto-electronic elements
Applicants:
CORNING INCORPORATED [US/US]; 1 Riverfront Plaza Corning, New York 14831, US (AllExceptUS)
BHAGAVATULA, Venkata A. [US/US]; US (UsOnly)
MCENROE, David J. [US/US]; US (UsOnly)
Inventors:
BHAGAVATULA, Venkata A.; US
MCENROE, David J.; US
Agent:
THOMPSON, Tina N.; Corning Incorporated Intellectual Property Department SP-TI-3-1 Corning, New York 14831, US
Priority Data:
12/338,24718.12.2008US
Title (EN) SEMICONDUCTOR CORE, INTEGRATED FIBROUS PHOTOVOLTAIC DEVICE
(FR) DISPOSITIF PHOTOVOLTAÏQUE FIBREUX INTÉGRÉ À ÂME SEMI-CONDUCTRICE
Abstract:
(EN) A cane having optical properties includes: a core formed of a semiconductor material; and a transparent cladding formed of glass, glass-ceramic, or polymer coaxially oriented about the core, the cane may be used to produce a photovoltaic device, including: a semiconductor core including at least one p-n junction, defined by respective n-type and p-type regions; a substantially transparent cladding in coaxial relationship with the semiconductor core, forming a longitudinally oriented cane; and first and second electrodes, each being electrically coupled to a respective one of the n-type and p-type regions.
(FR) L'invention porte sur une baguette possédant des propriétés optiques qui comprend : une âme faite d'un matériau semi-conducteur; et une gaine transparente faite de verre, de vitrocérame ou de polymère orienté coaxialement autour de l'âme, la baguette pouvant être utilisée pour produire un dispositif photovoltaïque, comprenant : une âme semi-conductrice comprenant au moins une jonction p-n, définie par des régions de type n et de type p respectives; une gaine sensiblement transparente en relation coaxiale par rapport à l'âme semi-conductrice, formant une baguette orientée longitudinalement; et des première et seconde électrodes, chacune électriquement couplée à l'une respective des régions de type n et de type p.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2368274JP2012513122