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1. (WO2010080097) ION IMPLANTATION WITH DIMINISHED SCANNING FIELD EFFECTS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/080097 International Application No.: PCT/US2009/006481
Publication Date: 15.07.2010 International Filing Date: 10.12.2009
IPC:
H01J 37/317 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30
Electron-beam or ion-beam tubes for localised treatment of objects
317
for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
Applicants:
AXCELIS TECHNOLOGIES, INC. [US/US]; Attn: Denis A. Robitaille 108 Cherry Hill Drive Beverly, Massachusetts 01915, US (AllExceptUS)
EISNER, Edward [US/US]; US (UsOnly)
Inventors:
EISNER, Edward; US
Priority Data:
12/338,64418.12.2008US
Title (EN) ION IMPLANTATION WITH DIMINISHED SCANNING FIELD EFFECTS
(FR) IMPLANTATION D’IONS AVEC EFFETS DE CHAMP DE BALAYAGE RÉDUITS
Abstract:
(EN) Ion implantation systems (110) and scanning systems are provided, in which a focus adjustment component (135) is provided to adjust a focal property of an ion beam (124) to diminish zero field effects of the scanner (136) upon the ion beam. The focal property may be adjusted in order to improve the consistency of the beam profile scanned across the workpiece (130), or to improve the consistency of the ion implantation across the workpiece (130). Methods are disclosed for providing a scanned ion beam to a workpiece, comprising scanning the ion beam to produce a scanned ion beam, adjusting a focal property of an ion beam in relation to zero field effects of the scanner upon the ion beam, and directing the ion beam toward the workpiece.
(FR) L’invention concerne des systèmes d’implantation d’ions (110) et des systèmes de balayage munis d’un composant de mise au point (135) qui sert à ajuster une propriété focale d’un faisceau ionique (124) afin de réduire les effets de champ nul du dispositif à balayage (136) sur le faisceau ionique. La propriété focale peut être ajustée afin d’améliorer la régularité du profil de faisceau balayé sur la pièce à travailler (130), ou d’améliorer la régularité de l’implantation d’ions sur la pièce à travailler (130). Les procédés selon l’invention permettent d’appliquer un faisceau ionique balayé sur une pièce à travailler et consistent à balayer le faisceau ionique afin d’obtenir un faisceau ionique balayé, à ajuster une propriété focale d’un faisceau ionique par rapport aux effets de champ nul du dispositif à balayage sur le faisceau ionique, et à diriger le faisceau ionique vers la pièce à travailler.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
JP2012513089CN102257592KR1020110112345