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1. (WO2010080008) GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/080008 International Application No.: PCT/KR2010/000165
Publication Date: 15.07.2010 International Filing Date: 11.01.2010
IPC:
H01L 33/04 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
Applicants:
우리엘에스티 주식회사 WOOREE LST CO., LTD. [KR/KR]; 경기도 안산시 단원구 성곡동 636-3번지 #636-3 Seonggok-dong, Danwon-gu Ansan-si, Gyeonggi-do 425-833, KR (AllExceptUS)
구분회 KOO, Bun Hei [KR/KR]; KR (UsOnly)
안도열 AHN, Do Yeol [KR/KR]; KR (UsOnly)
박승환 PARK, Seoung Hwan [KR/KR]; KR (UsOnly)
Inventors:
구분회 KOO, Bun Hei; KR
안도열 AHN, Do Yeol; KR
박승환 PARK, Seoung Hwan; KR
Agent:
안상정 AN, Sang Jeong; 경기도 수원시 영통구 이의동 차세대융합기술연구원 A동 7층 7F, Tower A, Advanced Institutes of Convergence Technology Iui-dong, Yeongtong-gu Suwon-si, Gyeonggi-do 443-270, KR
Priority Data:
10-2009-000174009.01.2009KR
Title (EN) GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT SEMI-CONDUCTEUR À NITRURE DU GROUPE III
(KO) 3족 질화물 반도체 발광소자
Abstract:
(EN) The present disclosure relates to a group III nitride semiconductor light emitting device comprising an n-type group III nitride semiconductor layer, a p-type group III nitride semiconductor layer, and an active layer interposed between the two semiconductor layers to generate light by the re-combination of electrons and holes, wherein said active layer includes a quantum well layer having a first energy band gap, and a wave function localization guide layer which has a second energy band gap smaller than the first energy band gap, and is disposed within the quantum well layer.
(FR) La présente invention concerne un dispositif électroluminescent semi-conducteur à nitrure du groupe III composé d'une couche semi-conductrice à nitrure du groupe III de type N, d'une couche semi-conductrice à nitrure du groupe III de type P et d'une couche active interposée entre les deux couches semi-conductrices afin de générer de la lumière par la recombinaison d'électrons et de trous, ladite couche active comprenant une couche de puits quantique, qui a une première bande interdite d'énergie, et une couche guide de localisation de fonction d'onde qui a une deuxième bande interdite d'énergie plus petite que la première bande interdite et qui est disposée dans la couche de puits quantique.
(KO) 본 개시는 n형 3족 질화물 반도체층, p형 3족 질화물 반도체층 및 이들 사이에 개재되어 전자와 정공의 재결합에 의해 빛이 생성되는 활성층을 포함하는 3족 질화물 반도체 발광소자에 있어서, 활성층은, 제1 에너지밴드 갭을 가지는 양자우물층 및 제1 에너지밴드 갭보다 작은 제2 에너지밴드 갭을 가지며, 양자우물층 내에 개재되는 파동함수 국소화 유도층을 포함하는 3족 질화물 반도체 발광소자에 관한 것이다.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)