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1. (WO2010079979) NOVEL GERMANIUM COMPLEXES WITH AMIDINE DERIVATIVE LIGAND AND PROCESS FOR PREPARING THE SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/079979 International Application No.: PCT/KR2010/000105
Publication Date: 15.07.2010 International Filing Date: 07.01.2010
IPC:
C07F 7/30 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7
Compounds containing elements of the 4th Group of the Periodic System
30
Germanium compounds
Applicants:
TECHNO SEMICHEM, CO., LTD. [KR/KR]; 4f, Humax Village, 11-4, Sunae-dong Bundang-gu, Seongnam-si Gyeonggi-do 463-875, KR (AllExceptUS)
JUNG, Jae Sun [KR/KR]; KR (UsOnly)
YUN, Su Hyong [KR/KR]; KR (UsOnly)
KIM, Minchan [KR/KR]; KR (UsOnly)
HAN, Sung Won [KR/KR]; KR (UsOnly)
PARK, Yong Joo [KR/KR]; KR (UsOnly)
SHIN, Su Jung [KR/KR]; KR (UsOnly)
SUNG, Ki Whan [KR/KR]; KR (UsOnly)
LEE, Sang Kyung [KR/KR]; KR (UsOnly)
Inventors:
JUNG, Jae Sun; KR
YUN, Su Hyong; KR
KIM, Minchan; KR
HAN, Sung Won; KR
PARK, Yong Joo; KR
SHIN, Su Jung; KR
SUNG, Ki Whan; KR
LEE, Sang Kyung; KR
Agent:
KWON, Oh-Sig; 4F, Jooeunleaderstel 921, Dunsan-dong, Seo-gu Daejon 302-120, KR
Priority Data:
10-2009-000164508.01.2009KR
Title (EN) NOVEL GERMANIUM COMPLEXES WITH AMIDINE DERIVATIVE LIGAND AND PROCESS FOR PREPARING THE SAME
(FR) NOUVEAUX COMPLEXES DE GERMANIUM AVEC UN LIGAND DÉRIVÉ D'AMIDINE ET LEUR PROCÉDÉ DE PRÉPARATION
Abstract:
(EN) Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).
(FR) L'invention concerne un complexe de germanium représenté par la Formule chimique 1, dans laquelle Y1 et Y2 sont choisis indépendamment parmi R3, NR4R5 ou OR6, et R1 à R6 représentent indépendamment un alkyle en (C1-C7). Le complexe de germanium avec un ligand dérivé d'amidine décrit est thermiquement stable, hautement volatil et ne comprend pas de composants halogène. Il peut par conséquent être utilisé de manière utile en tant que précurseur pour produire un film mince de germanium de grande qualité ou un film mince d'un composé contenant du germanium par dépôt chimique en phase vapeur utilisant des organo-métalliques (MOCVD) ou par dépôt en couche atomique (ALD).
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2385949JP2012514635US20110268881CN102272140