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1. (WO2010079814) NITRIDE CRYSTAL MANUFACTURING METHOD, NITRIDE CRYSTAL, AND DEVICE FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/079814 International Application No.: PCT/JP2010/050118
Publication Date: 15.07.2010 International Filing Date: 07.01.2010
IPC:
C30B 9/06 (2006.01) ,B01J 3/00 (2006.01) ,C30B 7/10 (2006.01) ,C30B 7/14 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
9
Single-crystal growth from melt solutions using molten solvents
04
by cooling of the solution
06
using as solvent a component of the crystal composition
B PERFORMING OPERATIONS; TRANSPORTING
01
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
J
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
3
Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
7
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
10
by application of pressure, e.g. hydrothermal processes
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
7
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
14
the crystallising materials being formed by chemical reactions in the solution
Applicants:
三菱化学株式会社 MITSUBISHI CHEMICAL CORPORATION [JP/JP]; 東京都港区芝四丁目14番1号 14-1, Shiba 4-chome, Minato-ku, Tokyo 1080014, JP (AllExceptUS)
国立大学法人東北大学 TOHOKU UNIVERSITY [JP/JP]; 宮城県仙台市青葉区片平二丁目1番1号 1-1, Katahira 2-chome, Aoba-ku, Sendai-shi, Miyagi 9808577, JP (AllExceptUS)
三川 豊 MIKAWA, Yutaka [JP/JP]; JP (UsOnly)
清見 真紀子 KIYOMI, Makiko [JP/JP]; JP (UsOnly)
鏡谷 勇二 KAGAMITANI, Yuji [JP/JP]; JP (UsOnly)
石黒 徹 ISHIGURO, Toru [JP/JP]; JP (UsOnly)
Inventors:
三川 豊 MIKAWA, Yutaka; JP
清見 真紀子 KIYOMI, Makiko; JP
鏡谷 勇二 KAGAMITANI, Yuji; JP
石黒 徹 ISHIGURO, Toru; JP
Agent:
泉名 謙治 SENMYO, Kenji; 東京都千代田区神田紺屋町17番地 SIA神田スクエア4階 4th Floor, SIA Kanda Square, 17, Kanda-konyacho, Chiyoda-ku, Tokyo 1010035, JP
Priority Data:
2009-00218908.01.2009JP
2009-19585626.08.2009JP
Title (EN) NITRIDE CRYSTAL MANUFACTURING METHOD, NITRIDE CRYSTAL, AND DEVICE FOR MANUFACTURING SAME
(FR) PROCÉDÉ DE FABRICATION DE CRISTAL DE NITRURE, CRISTAL DE NITRURE ET DISPOSITIF DE FABRICATION DE CELUI-CI
(JA) 窒化物結晶の製造方法、窒化物結晶およびその製造装置
Abstract:
(EN) The objective is to efficiently grow a high-purity nitride crystal with a low oxygen concentration by means of an ammonothermal method. This nitride crystal manufacturing method is characterized in that a reactive gas which reacts with ammonia to produce a mineralizer, and ammonia, are brought into contact in a reaction chamber or in a closed circuit connected to a reaction chamber, producing the mineralizer, and in the presence of the aforementioned ammonia and the aforementioned mineralizer a nitride crystal is grown by an ammonothermal method.
(FR) On peut réaliser avec un bon rendement, selon une méthode ammonothermale, la croissance d'un cristal de nitrure d'un haut degré de pureté et à faible teneur en oxygène. Dans une cuve de réaction ou bien dans un circuit fermé relié à une cuve de réaction, on produit un agent minéralisateur en mettant en contact avec de l'ammoniac un gaz réactif qui, en réagissant avec de l'ammoniac, produit un agent minéralisateur. Ce procédé de fabrication de cristal de nitrure se caractérise par une croissance de cristal de nitrure, par méthode ammonothermale, en présence desdits ammoniac et agent minéralisateur.
(JA)  酸素濃度が低くて高純度の窒化物結晶をアモノサーマル法によって効率よく成長させること。 反応容器内または反応容器に繋がる閉回路内で、アンモニアと反応して鉱化剤を生成する反応性ガスとアンモニアとを接触させて鉱化剤を生成し、前記アンモニアと前記鉱化剤の存在下でアモノサーマル法によって窒化物結晶を成長させることを特徴とする窒化物結晶の製造方法。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP2377974US20110268645CN102272357KR1020110112278