Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2010079766) PLASMA PROCESSING APPARATUS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/079766 International Application No.: PCT/JP2010/000093
Publication Date: 15.07.2010 International Filing Date: 08.01.2010
IPC:
H01L 21/205 (2006.01) ,C23C 16/455 (2006.01) ,C23C 16/505 (2006.01) ,H01L 31/04 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
505
using radio frequency discharges
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
Applicants:
株式会社アルバック ULVAC, Inc. [JP/JP]; 神奈川県茅ヶ崎市萩園2500 2500, Hagisono, Chigasaki-shi, Kanagawa 2538543, JP (AllExceptUS)
若松貞次 WAKAMATSU, Sadatsugu [JP/JP]; JP (UsOnly)
亀崎厚治 KAMESAKI, Koji [JP/JP]; JP (UsOnly)
菊池正志 KIKUCHI, Masashi [JP/JP]; JP (UsOnly)
神保洋介 JIMBO, Yosuke [JP/JP]; JP (UsOnly)
江藤謙次 ETO, Kenji [JP/JP]; JP (UsOnly)
浅利伸 ASARI, Shin [JP/JP]; JP (UsOnly)
内田寛人 UCHIDA, Hiroto [JP/JP]; JP (UsOnly)
Inventors:
若松貞次 WAKAMATSU, Sadatsugu; JP
亀崎厚治 KAMESAKI, Koji; JP
菊池正志 KIKUCHI, Masashi; JP
神保洋介 JIMBO, Yosuke; JP
江藤謙次 ETO, Kenji; JP
浅利伸 ASARI, Shin; JP
内田寛人 UCHIDA, Hiroto; JP
Agent:
志賀正武 SHIGA, Masatake; 東京都千代田区丸の内一丁目9番2号 1-9-2, Marunouchi, Chiyoda-ku, Tokyo 1006620, JP
Priority Data:
2009-00402309.01.2009JP
Title (EN) PLASMA PROCESSING APPARATUS
(FR) APPAREIL DE TRAITEMENT PAR PLASMA
(JA) プラズマ処理装置
Abstract:
(EN) Disclosed is a plasma processing apparatus which comprises: a processing chamber which has a reaction chamber (α) and is configured of a chamber (2), an electrode flange (4) and an insulating flange (81); a support part (15) which is arranged within the reaction chamber (α) and on which a substrate (10) is placed; a shower plate (5) which is arranged within the reaction chamber (α) so as to face the substrate (10) and supplies a process gas to the substrate (10); a plurality of gas supply parts (8) which are concentrically and annularly arranged within a space (31) between the electrode flange (4) and the shower plate (5), respectively communicate with a plurality of gas inlet openings (34), and independently supply process gases having different compositions to the shower plate (5); and a voltage-applying part (33) which applies a voltage between the shower plate (5) and the support part (15).
(FR) L'invention porte sur un appareil de traitement par plasma qui comprend : une chambre de traitement qui comprend une chambre de réaction (α) et est composée d'une chambre (2), d'une bride d'électrode (4) et d'une bride isolante (81) ; une partie support (15) qui est agencée dans la chambre de réaction (α) et sur laquelle est placé un substrat (10) ; une plaque d'arrosage (5) qui est agencée dans la chambre de réaction (α) de façon à faire face au substrat (10) et fournit un gaz de traitement au substrat (10) ; une pluralité de parties d'alimentation en gaz (8) qui sont agencées de façon concentrique et annulaire dans un espace (31) compris entre la bride d'électrode (4) et la plaque d'arrosage (5), communiquent respectivement avec une pluralité d'ouvertures d'admission de gaz (34), et fournissent indépendamment des gaz de traitement ayant des compositions différentes à la plaque d'arrosage (5) ; et une partie d'application de tension (33) qui applique une tension entre la plaque d'arrosage (5) et la partie support (15).
(JA)  このプラズマ処理装置は、チャンバ(2)と、電極フランジ(4)と、絶縁フランジ(81)とから構成され、反応室(α)を有する処理室と、前記反応室(α)内に収容され、基板(10)が載置される支持部(15)と、前記反応室(α)内に収容され、前記基板(10)に対向するように配置され、前記基板(10)に向けてプロセスガスを供給するシャワープレート(5)と、前記電極フランジ(4)と前記シャワープレート(5)との間の空間(31)内に設けられ、複数のガス導入口(34)の各々に連通し、同心状かつ環状に配置され、前記シャワープレート(5)に向けて異なる組成の前記プロセスガスを独立して供給する複数のガス供給部(8)と、前記シャワープレート(5)と前記支持部(15)との間に電圧を印加する電圧印加部(33)とを含む。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN102272896DE112010000869KR1020110094115