Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2010079756) PLASMA PROCESSING APPARATUS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/079756 International Application No.: PCT/JP2010/000067
Publication Date: 15.07.2010 International Filing Date: 07.01.2010
IPC:
H01L 21/205 (2006.01) ,H01L 31/04 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
Applicants:
株式会社アルバック ULVAC, Inc. [JP/JP]; 神奈川県茅ヶ崎市萩園2500 2500, Hagisono, Chigasaki-shi, Kanagawa 2538543, JP (AllExceptUS)
若松貞次 WAKAMATSU, Sadatsugu [JP/JP]; JP (UsOnly)
亀崎厚治 KAMESAKI, Koji [JP/JP]; JP (UsOnly)
菊池正志 KIKUCHI, Masashi [JP/JP]; JP (UsOnly)
神保洋介 JIMBO, Yosuke [JP/JP]; JP (UsOnly)
江藤謙次 ETO, Kenji [JP/JP]; JP (UsOnly)
浅利伸 ASARI, Shin [JP/JP]; JP (UsOnly)
内田寛人 UCHIDA, Hiroto [JP/JP]; JP (UsOnly)
Inventors:
若松貞次 WAKAMATSU, Sadatsugu; JP
亀崎厚治 KAMESAKI, Koji; JP
菊池正志 KIKUCHI, Masashi; JP
神保洋介 JIMBO, Yosuke; JP
江藤謙次 ETO, Kenji; JP
浅利伸 ASARI, Shin; JP
内田寛人 UCHIDA, Hiroto; JP
Agent:
志賀正武 SHIGA, Masatake; 東京都千代田区丸の内一丁目9番2号 1-9-2, Marunouchi, Chiyoda-ku, Tokyo 1006620, JP
Priority Data:
2009-00402509.01.2009JP
Title (EN) PLASMA PROCESSING APPARATUS
(FR) APPAREIL DE TRAITEMENT PAR PLASMA
(JA) プラズマ処理装置
Abstract:
(EN) Disclosed is a plasma processing apparatus which comprises: a processing chamber (101) which has a reaction chamber (2a) and is configured of a chamber (2) having a side wall (34), an electrode flange (4) and an insulating flange (81) interposed between the chamber (2) and the electrode flange (4); a support part (15) which is arranged within the reaction chamber (2a) and on which a substrate (10) having a surface to be processed (10a) is placed; a carry in/out port (36) which is provided on the side wall (34) of the chamber (2); an RF power supply (9) which is connected to the electrode flange (4) and applies a high-frequency voltage thereto; a first door valve (55) which is provided on the carry in/out port (36) and opens/closes the carry in/out port (36); and a second door valve (56) which is electrically connected to the chamber (2) and has a surface portion (56a) which is on the same plane as an inner side surface (33) of the chamber (2).
(FR) L'invention porte sur un appareil de traitement par plasma qui comprend : une chambre de traitement (101) qui comprend une chambre de réaction (2a) et est constituée d'une chambre (2) ayant une paroi latérale (34), d'une bride d'électrode (4) et d'une bride isolante (81) intercalée entre la chambre (2) et la bride d'électrode (4) ; une partie de support (15) qui est agencée dans la chambre de réaction (2a) et sur laquelle est placé un substrat (10) ayant une surface devant être traitée (10a) ; un orifice d'entrée/sortie (36) qui est installé sur la paroi latérale (34) de la chambre (2) ; une alimentation électrique RF (9) qui est connectée à la bride d'électrode (4) et lui applique une tension haute fréquence ; une première vanne de porte (55) qui est installée sur l'orifice d'entrée/sortie (36) et ouvre/ferme l'orifice d'entrée/sortie (36) ; et une seconde vanne de porte (56) qui est électriquement connectée à la chambre (2) et comprend une partie de surface (56a) qui se trouve sur le même plan qu'une surface latérale interne (33) de la chambre (2).
(JA)  このプラズマ処理装置は、側壁(34)を有するチャンバ(2)と、電極フランジ(4)と、前記チャンバ(2)及び前記電極フランジ(4)によって挟まれた絶縁フランジ(81)とから構成され、反応室(2a)を有する処理室(101)と、前記反応室(2a)内に収容され、処理面(10a)を有する基板(10)が載置される支持部(15)と、前記チャンバ(2)の前記側壁(34)に設けられた搬出入部(36)と、前記電極フランジ(4)に接続され、高周波電圧を印加するRF電源(9)と、前記搬出入部(36)に設けられ、前記搬出入部(36)を開閉する第一ドアバルブ(55)と、前記チャンバ(2)と電気的に接続され、前記チャンバ(2)の内側面(33)と同一平面上に位置する面部(56a)を有する第二ドアバルブ(56)とを含む。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2010079756CN102272895KR1020110094113