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1. (WO2010079753) PLASMA PROCESSING APPARATUS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/079753 International Application No.: PCT/JP2010/000057
Publication Date: 15.07.2010 International Filing Date: 06.01.2010
IPC:
H01L 21/205 (2006.01) ,C23C 16/455 (2006.01) ,C23C 16/505 (2006.01) ,H01L 31/04 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
505
using radio frequency discharges
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
Applicants:
株式会社アルバック ULVAC, Inc. [JP/JP]; 神奈川県茅ヶ崎市萩園2500 2500, Hagisono, Chigasaki-shi, Kanagawa 2538543, JP (AllExceptUS)
若松貞次 WAKAMATSU, Sadatsugu [JP/JP]; JP (UsOnly)
亀崎厚治 KAMESAKI, Koji [JP/JP]; JP (UsOnly)
菊池正志 KIKUCHI, Masashi [JP/JP]; JP (UsOnly)
神保洋介 JIMBO, Yosuke [JP/JP]; JP (UsOnly)
江藤謙次 ETO, Kenji [JP/JP]; JP (UsOnly)
浅利伸 ASARI, Shin [JP/JP]; JP (UsOnly)
内田寛人 UCHIDA, Hiroto [JP/JP]; JP (UsOnly)
Inventors:
若松貞次 WAKAMATSU, Sadatsugu; JP
亀崎厚治 KAMESAKI, Koji; JP
菊池正志 KIKUCHI, Masashi; JP
神保洋介 JIMBO, Yosuke; JP
江藤謙次 ETO, Kenji; JP
浅利伸 ASARI, Shin; JP
内田寛人 UCHIDA, Hiroto; JP
Agent:
志賀正武 SHIGA, Masatake; 東京都千代田区丸の内一丁目9番2号 1-9-2, Marunouchi, Chiyoda-ku, Tokyo 1006620, JP
Priority Data:
2009-00402209.01.2009JP
Title (EN) PLASMA PROCESSING APPARATUS
(FR) APPAREIL DE TRAITEMENT PAR PLASMA
(JA) プラズマ処理装置
Abstract:
(EN) Disclosed is a plasma processing apparatus comprising: a base member (3) having a first base surface (33), a second base surface (33a) and a base step portion (34); an insulating plate (35) which is formed from an insulating material and arranged on the second base surface (33a), while having a height equal to or less than the height from the second base surface (33a) to the upper surface (10a) of a substrate (10) that is arranged on the first base surface (33); a shower plate (5) having a first shower surface (5a), a second shower surface (5b) and a shower step portion (42); and an electrode mask (43) which is formed from an insulating material and so arranged on the second shower surface (5b) as to face the insulating plate (35), while having a height equal to or less than the height from the second shower surface (5b) to the first shower surface (5a).
(FR) L'invention porte sur un appareil de traitement par plasma comprenant : un élément de base (3) ayant une première surface de base (33), une seconde surface de base (33a) et une partie d'échelon de base (34) ; une plaque isolante (35) qui est constituée d'un matériau isolant et est agencée sur la seconde surface de base (33a), tout en ayant une hauteur égale ou inférieure à la hauteur allant de la seconde surface de base (33a) à la surface supérieure (10a) d'un substrat (10) qui est agencé sur la première surface de base (33) ; une plaque d'arrosage (5) ayant une première surface d'arrosage (5a), une seconde surface d'arrosage (5b) et une partie d'échelon d'arrosage (42) ; et un masque d'électrode (43) qui est constitué d'un matériau isolant et est agencé sur la seconde surface d'arrosage (5b) de façon à faire face à la plaque isolante (35), tout en ayant une hauteur égale ou inférieure à la hauteur allant de la seconde surface d'arrosage (5b) à la première surface d'arrosage (5a).
(JA)  このプラズマ処理装置は、第1ベース面(33),第2ベース面(33a),及びベース段差部(34)を有するベース部材(3)と、前記第2ベース面(33a)から前記第1ベース面(33)に載置された基板(10)の上面(10a)までの高さ以下である高さを有し、前記第2ベース面(33a)上に配置され、絶縁物質で形成された絶縁プレート(35)と、第1シャワー面(5a),第2シャワー面(5b),及びシャワー段差部(42)を有するシャワープレート(5)と、前記第2シャワー面(5b)から前記第1シャワー面(5a)までの高さ以下である高さを有し、前記絶縁プレート(35)に対向するように前記第2シャワー面(5b)上に配置され、絶縁物質で形成された電極マスク(43)とを含む。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2010079753CN102272894DE112010000717KR1020110089453