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1. (WO2010079738) PLASMA PROCESSING APPARATUS AND PLASMA CVD FILM-FORMING METHOD
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/079738 International Application No.: PCT/JP2010/000021
Publication Date: 15.07.2010 International Filing Date: 05.01.2010
IPC:
H01L 21/205 (2006.01) ,C23C 16/455 (2006.01) ,C23C 16/505 (2006.01) ,H01L 31/04 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
505
using radio frequency discharges
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
Applicants:
株式会社アルバック ULVAC, Inc. [JP/JP]; 神奈川県茅ヶ崎市萩園2500 2500, Hagisono, Chigasaki-shi, Kanagawa 2538543, JP (AllExceptUS)
若松貞次 WAKAMATSU, Sadatsugu [JP/JP]; JP (UsOnly)
亀崎厚治 KAMESAKI, Koji [JP/JP]; JP (UsOnly)
菊池正志 KIKUCHI, Masashi [JP/JP]; JP (UsOnly)
神保洋介 JIMBO, Yosuke [JP/JP]; JP (UsOnly)
江藤謙次 ETO, Kenji [JP/JP]; JP (UsOnly)
浅利伸 ASARI, Shin [JP/JP]; JP (UsOnly)
内田寛人 UCHIDA, Hiroto [JP/JP]; JP (UsOnly)
Inventors:
若松貞次 WAKAMATSU, Sadatsugu; JP
亀崎厚治 KAMESAKI, Koji; JP
菊池正志 KIKUCHI, Masashi; JP
神保洋介 JIMBO, Yosuke; JP
江藤謙次 ETO, Kenji; JP
浅利伸 ASARI, Shin; JP
内田寛人 UCHIDA, Hiroto; JP
Agent:
志賀正武 SHIGA, Masatake; 東京都千代田区丸の内一丁目9番2号 1-9-2, Marunouchi, Chiyoda-ku, Tokyo 1006620, JP
Priority Data:
2009-00402409.01.2009JP
Title (EN) PLASMA PROCESSING APPARATUS AND PLASMA CVD FILM-FORMING METHOD
(FR) APPAREIL DE TRAITEMENT AU PLASMA ET PROCÉDÉ DE FORMATION DE COUCHE PAR DÉPÔT CHIMIQUE EN PHASE VAPEUR AU PLASMA
(JA) プラズマ処理装置及びプラズマCVD成膜方法
Abstract:
(EN) Disclosed is a plasma processing apparatus which comprises: a processing chamber (101) having a reaction chamber (2a); a support part (15) which is arranged within the reaction chamber (2a) and controls the temperature of a substrate (10) having a surface to be processed (10a), said substrate (10) being placed on the support part; a shower plate (5) which is arranged within the reaction chamber (2a) so as to face the surface to be processed (10a) and supplies a process gas to the substrate (10); and a pressure-adjusting plate (51) which divides the space (24) between an electrode flange (4) and the shower plate (5) into a first space (24a) which is formed on the gas feed port (42) side and a second space (24b) which is formed on the shower plate (5) side.  The distance between the substrate (10) and the shower plate (5) is not less than 3 mm but not more than 10 mm.
(FR) La présente invention a trait à un appareil de traitement au plasma qui comprend : une chambre de traitement (101) dotée d’une chambre de réaction (2a) ; une partie de support (15) qui est disposée à l’intérieur de la chambre de réaction (2a) et qui contrôle la température d’un substrat (10) ayant une surface devant être traitée (10a), ledit substrat (10) étant placé sur la partie de support ; une plaque de douche (5) qui est disposée à l’intérieur de la chambre de réaction (2a) de manière à faire face à la surface devant être traiter (10a) et qui fournit un gaz de traitement au substrat (10) ; et une plaque de régulation de pression (51) qui divise l’espace (24) entre une bride d’électrode (4) et la plaque de douche (5) en un premier espace (24a) qui est formé sur le côté de l’orifice d’alimentation en gaz (42) et un second espace (24b) qui est formé sur le côté de la plaque de douche (5). La distance entre le substrat (10) et la plaque de douche (5) n’est pas inférieure à 3 mm mais n’est pas supérieure à 10 mm.
(JA)  このプラズマ処理装置は、反応室(2a)を有する処理室(101)と、前記反応室(2a)内に収容され、処理室(10a)を有する基板(10)が載置され、前記基板(10)の温度を制御する支持部(15)と、前記反応室(2a)内に収容され、前記処理室(10a)に対向するように配置され、前記基板(10)に向けてプロセスガスを供給するシャワープレート(5)と、前記電極フランジ(4)と前記シャワープレート(5)との間に設けられた空間(24)を、ガス導入口(42)側に形成される第一空間(24a)と、前記シャワープレート(5)側に形成される第二空間(24b)とに分ける圧力調整プレート(51)とを含み、前記基板(10)と前記シャワープレート(5)との距離が3mm以上、10mm以下である。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2010079738CN102272897KR1020110104982