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1. (WO2010079662) PIEZORESISTIVE PRESSURE SENSOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/079662 International Application No.: PCT/JP2009/070497
Publication Date: 15.07.2010 International Filing Date: 07.12.2009
IPC:
G01L 9/00 (2006.01) ,H01L 29/84 (2006.01)
G PHYSICS
01
MEASURING; TESTING
L
MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
9
Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
84
controllable by variation of applied mechanical force, e.g. of pressure
Applicants:
アルプス電気株式会社 ALPS ELECTRIC CO., LTD. [JP/JP]; 東京都大田区雪谷大塚町1番7号 1-7, Yukigaya-otsukamachi, Ota-ku, Tokyo 1458501, JP (AllExceptUS)
横山 進矢 YOKOYAMA, Shinya [JP/JP]; JP (UsOnly)
青木 大悟 AOKI, Daigo [JP/JP]; JP (UsOnly)
高島 裕 TAKASHIMA, Yutaka [JP/JP]; JP (UsOnly)
Inventors:
横山 進矢 YOKOYAMA, Shinya; JP
青木 大悟 AOKI, Daigo; JP
高島 裕 TAKASHIMA, Yutaka; JP
Agent:
青木 宏義 AOKI, Hiroyoshi; 東京都千代田区二番町4番3 二番町カシュービル7F 7F, Nibancho Cashew Bldg. 4-3, Niban-cho Chiyoda-ku, Tokyo 1020084, JP
Priority Data:
2009-00101006.01.2009JP
Title (EN) PIEZORESISTIVE PRESSURE SENSOR
(FR) CAPTEUR DE PRESSION PIÉZORÉSISTIF
(JA) ピエゾ抵抗型圧力センサ
Abstract:
(EN) Provided is a piezoresistive pressure sensor which can prevent ESD destruction caused by mutual approach of wiring layers of a resistance element accompanying reduction of the element size.  The piezoresistive pressure sensor includes semiconductor resistance layers (20a, 20b) positioned at both sides of arrangement.  The semiconductor resistance layers (20a, 20b) are formed relatively long with respect to an adjacent semiconductor resistance layer (20c) so as to separate an angular portion (R1 (R4)) of a semiconductor wiring connection layer (25 (26)) extending from each of the semiconductor resistance layers (20a, 20b) at the both sides of the arrangement which easily causes particularly ESD, from an angular portion (R2 (R3)) of a semiconductor wiring layer (21b (21a)) arranged at the nearest position to the angular portion (R1 (R4)).
(FR) L'invention concerne un capteur de pression piézorésistif protégé de la destruction par une décharge électrostatique due à la proximité de couches de câblage d'un élément résistif, et bénéficiant d'une taille compacte. Le capteur de pression piézorésistif comprend des couches résistives à semiconducteur (20a, 20b) disposées des deux côtés du montage. Les couches résistives à semiconducteur (20a, 20b) sont relativement longues par rapport à une couche résistive à semiconducteur adjacente (20c) de manière à séparer une partie angulaire (R1 (R4)) d'une couche de liaison de câblage à semiconducteur (25 (26)) s'étendant de chacune des couches résistives à semiconducteur (20a, 20b) des deux côtés du montage, et provoquant facilement des décharges électrostatiques, d'une partie angulaire (R2 (R3)) d'une couche de câblage à semiconducteur (21b (21a)) située à proximité immédiate de la partie angulaire (R1 (R4)).
(JA)  小型化に伴う抵抗素子の配線層同士の接近によってESD破壊が生じることを未然に防止できるピエゾ抵抗型圧力センサを提供すること。本発明のピエゾ抵抗型圧力センサは、配列の両側の各半導体抵抗層(20a,20b)をそれに隣り合う半導体抵抗層(20c)に対して相対的に長く形成することにより、特にESDを引き起こし易い配列の両側の各半導体抵抗層(20a,20b)から延びる半導体配線接続層(25(26))の角部(R1(R4))とそれに最も近い半導体配線層(21b(21a))の角部(R2(R3))とを離隔させるようにしている。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2010079662