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1. (WO2010078454) VARIABLE MEMORY REFRESH DEVICES AND METHODS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/078454 International Application No.: PCT/US2009/069858
Publication Date: 08.07.2010 International Filing Date: 30.12.2009
IPC:
G11C 11/401 (2006.01) ,G11C 11/406 (2006.01) ,G11C 7/00 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
401
forming cells needing refreshing or charge regeneration, i.e. dynamic cells
406
Management or control of the refreshing or charge-regeneration cycles
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
7
Arrangements for writing information into, or reading information out from, a digital store
Applicants:
MICRON TECHNOLOGY, INC. [US/US]; 8000 So. Federal Way Boise, Idaho 83716-9632, US (AllExceptUS)
JEDDELOH, Joe, M. [US/US]; US (UsOnly)
Inventors:
JEDDELOH, Joe, M.; US
Agent:
MADDEN, Robert B.; Schwegman, Lundberg, & Woessner, P.A. P.O. Box 2938 Minneapolis, Minnesota 55402-0938, US
Priority Data:
12/346,54230.12.2008US
Title (EN) VARIABLE MEMORY REFRESH DEVICES AND METHODS
(FR) DISPOSITIFS ET PROCÉDÉS DE RAFRAÎCHISSEMENT DE MÉMOIRE VARIABLE
Abstract:
(EN) Memory devices and methods are described such as those that monitor and adjust characteristics for various different portions of a given memory device. Examples of different portions include tiles, or arrays, or dies. One memory device and method described includes monitoring and adjusting characteristics of different portions of a 3D stack of memory dies. One characteristic that can be adjusted at multiple selected portions includes refresh rate.
(FR) L'invention porte sur des dispositifs de mémoire et des procédés, tels que ceux qui surveillent et ajustent des caractéristiques pour diverses parties différentes d'un dispositif de mémoire donné. Des exemples de différentes parties comprennent des pavés, ou ensembles ou matrices. Un dispositif de mémoire et un procédé de mémoire selon l'invention comprennent la surveillance et l'ajustement de caractéristiques des différentes parties d'un empilement en 3D de matrices de mémoire. Une caractéristique qui peut être ajustée à de multiples parties sélectionnées comprend une vitesse de rafraîchissement.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2377127JP2012514286CN102272849KR1020110103447KR1020150046363