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1. (WO2010078074) LOCAL SILICIDATION OF VIA BOTTOMS IN METALLIZATION SYSTEMS OF SEMICONDUCTOR DEVICES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/078074 International Application No.: PCT/US2009/068673
Publication Date: 08.07.2010 International Filing Date: 18.12.2009
IPC:
H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
GLOBALFOUNDRIES INC.; Maple Corporate Services Limited P.O. Box 309 Ugland House Grand Caymanm, KY1-1104, KY (AllExceptUS)
LETZ, Tobias [DE/DE]; DE (UsOnly)
FEUSTEL, Frank [DE/DE]; DE (UsOnly)
Inventors:
LETZ, Tobias; DE
FEUSTEL, Frank; DE
Agent:
AMERSON, J., Mike; Williams, Morgan & Amerson P.C. 10333 Richmond Ave., Suite 1100 Houston, TX 77042, US
Priority Data:
102008063417431.12.2008DE
12/640,44417.12.2009US
Title (EN) LOCAL SILICIDATION OF VIA BOTTOMS IN METALLIZATION SYSTEMS OF SEMICONDUCTOR DEVICES
(FR) SILICIURATION LOCALE DE FONDS DE TROU D'INTERCONNEXION DANS DES SYSTÈMES DE MÉTALLISATION DE DISPOSITIFS À SEMI-CONDUCTEURS
Abstract:
(EN) Electromigration behavior in complex metallization systems of semiconductor devices may be enhanced at critical areas between a metal line and a via by locally forming a copper/silicon compound. In some illustrative embodiments, the formation of the copper/ silicon compound may be combined with other treatments for cleaning the exposed surface areas and/or modifying the molecular structure thereof.
(FR) Selon l'invention, un comportement d'électromigration dans des systèmes de métallisation complexes de dispositifs à semi-conducteurs peut être amélioré au niveau de zones critiques entre une ligne métallique et un trou d'interconnexion par formation locale d'un composé cuivre/silicium. Dans certains modes de réalisation illustratifs, la formation du composé cuivre/silicium peut être combinée à d'autres traitements de nettoyage des zones de surface exposée et/ou de modification de leur structure moléculaire.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)