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1. (WO2010078022) TAPE-BASED EPITAXIAL LIFT OFF APPARATUSES AND METHODS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/078022 International Application No.: PCT/US2009/068445
Publication Date: 08.07.2010 International Filing Date: 17.12.2009
IPC:
H01L 21/306 (2006.01) ,H01L 21/50 (2006.01) ,H01L 31/042 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
Applicants:
ALTA DEVICES, INC. [US/US]; 3260 Scott Blvd. Santa Clara, California 95054, US (AllExceptUS)
GMITTER, Thomas J. [US/US]; US (UsOnly)
HE, Gang [US/US]; US (UsOnly)
ARCHER, Melissa [US/US]; US (UsOnly)
HEGEDUS, Andreas [US/US]; US (UsOnly)
Inventors:
GMITTER, Thomas J.; US
HE, Gang; US
ARCHER, Melissa; US
HEGEDUS, Andreas; US
Agent:
PATTERSON, B. Todd; 3040 Post Oak Blvd., Suite 1500 Houston, Texas 77056-6582, US
Priority Data:
61/138,44017.12.2008US
61/257,32602.11.2009US
Title (EN) TAPE-BASED EPITAXIAL LIFT OFF APPARATUSES AND METHODS
(FR) APPAREILS ET PROCÉDÉS DE RETRAIT ÉPITAXIAL DE TYPE BANDE
Abstract:
(EN) Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.
(FR) La présente invention se rapporte en règle générale, dans des modes de réalisation, à des appareils et à des procédés permettant de produire de minces films et dispositifs épitaxiaux par des procédés de retrait épitaxial (ELO). Dans un mode de réalisation, un procédé permettant de former des dispositifs à film mince pendant un procédé ELO est proposé, lequel procédé consiste à coupler une pluralité de substrats à une bande support allongée, chaque substrat contenant un film épitaxial disposé sur une couche sacrificielle disposée sur une tranche, exposer les substrats à un agent de gravure pendant un procédé de gravure tout en déplaçant la bande support allongée, et graver les couches sacrificielles et détacher les films épitaxiaux des tranches tout en déplaçant la bande support allongée. Des modes de réalisation comprennent également plusieurs appareils de type continu ainsi que des appareils de type discontinu, pour former les minces films et dispositifs épitaxiaux, comprenant un appareil permettant d'enlever la bande support et les films épitaxiaux des tranches sur lesquelles les films épitaxiaux étaient développés.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2359393CN102301456KR1020110114577