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1. (WO2010077801) METHODS FOR SIMULTANEOUSLY FORMING DOPED REGIONS HAVING DIFFERENT CONDUCTIVITY-DETERMINING TYPE ELEMENT PROFILES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/077801 International Application No.: PCT/US2009/067832
Publication Date: 08.07.2010 International Filing Date: 14.12.2009
IPC:
H01L 21/265 (2006.01) ,H01L 31/042 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
Applicants:
HONEYWELL INTERNATIONAL INC. [US/US]; Law Department AB/2B 101 Columbia Road Morristown, New Jersey 07962, US (AllExceptUS)
LEUNG, Roger Yu-Kwan [US/US]; US (UsOnly)
RUTHERFORD, Nicole [US/US]; US (UsOnly)
BHANAP, Anil [US/US]; US (UsOnly)
Inventors:
LEUNG, Roger Yu-Kwan; US
RUTHERFORD, Nicole; US
BHANAP, Anil; US
Agent:
HENSCHEID, Deborah; Ingrassia Fisher & Lorenz, P.C. 7010 E. Cochise Rd Scottsdale, Arizona 85253, US
Priority Data:
12/344,74829.12.2008US
Title (EN) METHODS FOR SIMULTANEOUSLY FORMING DOPED REGIONS HAVING DIFFERENT CONDUCTIVITY-DETERMINING TYPE ELEMENT PROFILES
(FR) PROCÉDÉ DE FORMATION SIMULTANÉE DE RÉGIONS DOPÉES DOTÉES DE PROFILS D'ÉLÉMENTS DE TYPE À DÉTERMINATION DE CONDUCTIVITÉ DIFFÉRENTS
Abstract:
(EN) Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.
(FR) La présente invention porte sur un procédé de formation simultanée de régions dopées dotées de profils d'éléments de type à détermination de conductivité différents. Dans un mode de réalisation illustratif, un procédé comprend les étapes consistant à diffuser des premiers éléments de type à détermination de conductivité dans une première région d'un matériau semi-conducteur à partir d'un premier dopant pour former une première région dopée. Des seconds éléments de type à détermination de conductivité sont simultanément diffusés dans une seconde région du matériau semi-conducteur à partir d'un second dopant pour former une seconde région dopée. Les premiers éléments de type à détermination de conductivité sont du même type à détermination de conductivité que les seconds éléments de type à détermination de conductivité. La première région dopée présente un profil de dopant qui est différent d'un profil de dopant de la seconde région dopée.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2370994JP2012514331CN102334179