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1. (WO2010077728) DENSIFICATION PROCESS FOR TITANIUM NITRIDE LAYER FOR SUBMICRON APPLICATIONS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/077728 International Application No.: PCT/US2009/067312
Publication Date: 08.07.2010 International Filing Date: 09.12.2009
IPC:
H01L 21/205 (2006.01) ,H01L 21/28 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, CA 95054, US (AllExceptUS)
RITCHIE, Alan Alexander [GB/US]; US (UsOnly)
HASSAN, Mohd Fadzli Anwar [MY/US]; US (UsOnly)
Inventors:
RITCHIE, Alan Alexander; US
HASSAN, Mohd Fadzli Anwar; US
Agent:
PATTERSON, B. Todd; Patterson & Sheridan, L.L.P. 3040 Post Oak Blvd., Suite 1500 Houston, Texas 77056-6582, US
Priority Data:
12/335,58216.12.2008US
Title (EN) DENSIFICATION PROCESS FOR TITANIUM NITRIDE LAYER FOR SUBMICRON APPLICATIONS
(FR) PROCÉDÉ DE DENSIFICATION POUR UNE COUCHE DE NITRURE DE TITANE DESTINÉE À DES APPLICATIONS SUBMICROMÉTRIQUES
Abstract:
(EN) Embodiments of the present invention provide methods of forming and densifying a titanium nitride barrier layer. The densification process is performed at a relatively low RF plasma power and high nitrogen to hydrogen ratio so as to provide a substantially titanium rich titanium nitride barrier layer. In one embodiment, a method for forming a titanium nitride barrier layer on a substrate includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition process, and performing a plasma treatment process on the deposited titanium nitride layer, wherein the plasma treatment process operates to densify the deposited titanium nitride layer, resulting in a densified titanium nitride layer, wherein the plasma treatment process further comprises supplying a plasma gas mixture containing a nitrogen gas to hydrogen gas ratio between about 20:1 and about 3:1, and applying less than about 500 Watts RF power to the plasma gas mixture.
(FR) La présente invention porte sur des procédés de formation et de densification d'une couche barrière constituée de nitrure de titane. Le procédé de densification est mis en œuvre à une puissance plasma RF relativement faible, avec un rapport azote à hydrogène élevé, de façon à fournir une couche barrière de nitrure de titane possédant essentiellement une teneur élevée en titane. Dans un mode de réalisation, un procédé de formation d'une couche barrière de nitrure de titane sur un substrat comprend le dépôt d'une couche de nitrure de titane sur le substrat par un procédé de déposition chimique en phase vapeur d'un composé organométallique, et la mise en œuvre d'un procédé de traitement plasma sur la couche de nitrure de titane déposée, le procédé de traitement plasma ayant pour but de densifier la couche de nitrure de titane déposée, ce qui va donner une couche de nitrure de titane densifiée, le procédé de traitement plasma comprenant en outre la fourniture d'un mélange de gaz plasma présentant un rapport de l'azote gazeux à l'hydrogène gazeux compris entre environ 20:1 et environ 3:1, et l'application d'une puissance RF inférieure à environ 500 watts au mélange de gaz plasma.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)