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1. (WO2010077590) LIGHT EMITTING DIODE WITH A DIELECTRIC MIRROR HAVING A LATERAL CONFIGURATION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/077590 International Application No.: PCT/US2009/066938
Publication Date: 08.07.2010 International Filing Date: 07.12.2009
Chapter 2 Demand Filed: 30.11.2010
IPC:
H01L 33/46 (2010.01) ,H01L 33/42 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
46
Reflective coating, e.g. dielectric Bragg reflector
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
40
Materials therefor
42
Transparent materials
Applicants:
CREE, INC. [US/US]; 4600 Silicon Drive Durham, NC 27703, US (AllExceptUS)
DONOFRIO, Matthew [US/US]; US (UsOnly)
EDMOND, John [US/US]; US (UsOnly)
IBBETSON, James [GB/US]; US (UsOnly)
TING, Li [CN/US]; US (UsOnly)
Inventors:
DONOFRIO, Matthew; US
EDMOND, John; US
IBBETSON, James; US
TING, Li; US
Agent:
HEYBL, Jaye, G.; Koppel, Patrick, Heybl & Dawson 2815 Townsgate Road Suite 215 Westlake Village, CA 91361-5827, US
Priority Data:
12/329,72208.12.2008US
Title (EN) LIGHT EMITTING DIODE WITH A DIELECTRIC MIRROR HAVING A LATERAL CONFIGURATION
(FR) DIODE ÉLECTROLUMINESCENTE À MIROIR DIÉLECTRIQUE PRÉSENTANT UNE CONFIGURATION LATÉRALE
Abstract:
(EN) A light emitting diode (10) is disclosed that includes an active structure (11,12), a first ohmic contact (15) on the active structure, and a transparent conductive oxide layer (13) on the active structure opposite the first ohmic contact. The transparent conductive oxide layer (13) has a larger footprint than said active structure (11,12). A dielectric mirror (14) is positioned on the transparent conductive oxide layer (13) opposite said active structure (11, 12) and a second contact (16) is positioned on the transparent conductive oxide layer (13) opposite the dielectric mirror (14) and separated from the active structure (11,12).
(FR) L'invention porte sur une diode électroluminescente qui comprend une structure active, un premier contact ohmique sur la structure active et une couche d'oxyde conducteur transparent sur la structure active opposée au premier contact ohmique. La couche d'oxyde conducteur transparent présente une plus grande zone de couverture que ladite structure active. Un miroir diélectrique est positionné sur la couche d'oxyde conducteur transparent opposée à ladite structure active et un second contact est positionné sur la couche d'oxyde conducteur transparent opposée au miroir diélectrique et séparé de la structure active.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2374164CN102742038KR1020110100266