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1. (WO2010077571) LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/077571 International Application No.: PCT/US2009/066743
Publication Date: 08.07.2010 International Filing Date: 04.12.2009
Chapter 2 Demand Filed: 30.06.2010
IPC:
H01L 33/22 (2010.01) ,H01L 33/46 (2010.01) ,H01L 33/20 (2010.01) ,H01L 33/40 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
22
Roughened surfaces, e.g. at the interface between epitaxial layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
46
Reflective coating, e.g. dielectric Bragg reflector
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
40
Materials therefor
Applicants:
CREE, INC. [US/US]; 4600 Silicon Drive Durham, NC 27703, US (AllExceptUS)
DONOFRIO, Matthew [US/US]; US (UsOnly)
KONG, Hua-Shuang [US/US]; US (UsOnly)
SLATER, David [US/US]; US (UsOnly)
EDMOND, John [US/US]; US (UsOnly)
Inventors:
DONOFRIO, Matthew; US
KONG, Hua-Shuang; US
SLATER, David; US
EDMOND, John; US
Agent:
HEYBL, Jaye, G.; Koppel, Patrick, Heybl & Dawson 2815 Townsgate Road Suite 215 Westlake Village, California 91361-5827, US
Priority Data:
12/329,71308.12.2008US
Title (EN) LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION
(FR) DIODE ÉLECTROLUMINESCENTE À EXTRACTION DE LUMIÈRE AMÉLIORÉE
Abstract:
(EN) A light emitting diode (70) is disclosed that includes an active region (83) and a plurality of exterior surfaces (77-81). A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping (77, 80) and texturing (78, 79). A light enhancement feature is present on at least portions of each of the other exterior surfaces (81) of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors (81).
(FR) L'invention porte sur une diode électroluminescente (70) qui comprend une région active (83) et une pluralité de surfaces extérieures (77-81). Une caractéristique d'amélioration de la lumière est présente sur au moins des parties de l'une des surfaces extérieures de la diode, la caractéristique d'amélioration de la lumière étant choisie dans le groupe comprenant la mise en forme (77, 80) et la texturation (78, 79). Une caractéristique d'amélioration de la lumière est présente sur au moins des parties de chacune des autres surfaces extérieures (81) de la diode, ces caractéristiques d'amélioration de la lumière étant choisies dans le groupe comprenant la mise en forme, la texturation et les réflecteurs (81).
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2374162CN102246325