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1. (WO2010077500) TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN VOLTAGE CHARACTERISTICS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/077500 International Application No.: PCT/US2009/065856
Publication Date: 08.07.2010 International Filing Date: 25.11.2009
IPC:
H01L 29/78 (2006.01) ,H01L 21/336 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
Applicants:
FAIRCHILD SEMICONDUCTOR CORPORATION [US/US]; 82 Running Hill Road MS 35-4E South Portland, Maine 04106-0022, US (AllExceptUS)
YEDINAK, Joseph A. [US/US]; US (UsOnly)
PROBST, Dean E. [US/US]; US (UsOnly)
CHALLA, Ashok [IN/US]; US (UsOnly)
CALAFUT, Daniel [US/US]; US (UsOnly)
Inventors:
YEDINAK, Joseph A.; US
PROBST, Dean E.; US
CHALLA, Ashok; US
CALAFUT, Daniel; US
Agent:
YEAGER, Hal R.; Townsend and Townsend and Crew LLP Two Embarcadero Center, 8th Floor San Francisco, California 94111-3834, US
Priority Data:
12/420,71108.04.2009US
61/120,81808.12.2008US
Title (EN) TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN VOLTAGE CHARACTERISTICS
(FR) DISPOSITIFS SEMI-CONDUCTEURS DE PUISSANCE À BASE DE TRANCHÉES PRÉSENTANT DES CARACTÉRISTIQUES D'UNE TENSION DE CLAQUAGE ACCRUE
Abstract:
(EN) Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
(FR) Les dispositifs semi-conducteurs de puissance de l'invention sont pourvus de caractéristiques fournissant une tension de claquage accrue et d'autres avantages.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN102246309KR1020110091590