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1. (WO2010077247) ELECTRICALLY AND/OR THERMALLY ACTUATED DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/077247 International Application No.: PCT/US2008/088642
Publication Date: 08.07.2010 International Filing Date: 31.12.2008
IPC:
H01L 27/115 (2006.01) ,H01L 21/8247 (2006.01) ,H01L 21/027 (2006.01) ,H01L 21/265 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8246
Read-only memory structures (ROM)
8247
electrically-programmable (EPROM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
Applicants:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; 11445 Compaq Center Drive W. Houston, TX 77070, US (AllExceptUS)
KAMINS, Theodore, I. [US/US]; US (UsOnly)
Inventors:
KAMINS, Theodore, I.; US
Agent:
COLLINS, David, W.; Hewlett-packard Company Intellectual Property Administration P.O. Box 272400, Mail Stop 35 Fort Collins, CO 80527-2400, US
Priority Data:
Title (EN) ELECTRICALLY AND/OR THERMALLY ACTUATED DEVICE
(FR) DISPOSITIF ACTIONNÉ ÉLECTRIQUEMENT ET/OU THERMIQUEMENT
Abstract:
(EN) An electrically, thermally, or electrically and thermally actuated device is disclosed herein. The device includes a substrate, a first electrode established on the substrate, an active region established on the electrode, and a second electrode established on the active region. A pattern is defined in at least one of the substrate, the first electrode, the second electrode, or the active region. At least one of grain boundaries are formed within, or surface asperities are formed on, at least one of the electrodes or the active region. The pattern controls the at least one of the grain boundaries or surface asperities.
(FR) L'invention porte sur un dispositif actionné électriquement, thermiquement, ou électriquement et thermiquement. Le dispositif comprend un substrat, une première électrode établie sur le substrat, une région active établie sur l'électrode, et une seconde électrode établie sur la région active. Un motif est défini dans au moins un des éléments tels que le substrat, la première électrode, la seconde électrode ou la région active. Au moins des joints de grain et/ou des aspérités de surface sont formées sur au moins un élément tel qu'une des électrodes ou la région active. Le motif agit sur au moins l'un des éléments tels que les joints de grain et/ou les aspérités de surface.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US20110181318