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1. (WO2010077245) MUTLIPLEXER/DE-MULTIPLEXER MEMRISTIVE DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/077245 International Application No.: PCT/US2008/088583
Publication Date: 08.07.2010 International Filing Date: 30.12.2008
IPC:
H01L 27/115 (2006.01) ,H01L 21/8247 (2006.01) ,H03K 17/687 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8246
Read-only memory structures (ROM)
8247
electrically-programmable (EPROM)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
687
the devices being field-effect transistors
Applicants:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. [US/US]; 11445 Compaq Center Drive W. Houston, Texas 77070, US (AllExceptUS)
STRACHAN, John Paul [US/US]; US (UsOnly)
FIORENTINO, Marco Fiorentino [IT/US]; US (UsOnly)
WU, Wei [CN/US]; US (UsOnly)
Inventors:
STRACHAN, John Paul; US
FIORENTINO, Marco Fiorentino; US
WU, Wei; US
Agent:
COLLINS, David, W.; Hewlett-Packard Company Intellectual Property Administration Mail Stop 35 P.O. Box 272400 Fort Collins, Colorado 80527-2400, US
Priority Data:
Title (EN) MUTLIPLEXER/DE-MULTIPLEXER MEMRISTIVE DEVICE
(FR) DISPOSITIF MEMRISTIF MULTIPLEXEUR/DÉMULTIPLEXEUR
Abstract:
(EN) A multiplexing/de-multiplexing memristive device (300) includes a memristive matrix (370) containing mobile dopants; and programming electrodes (310, 320) which apply programming electrical field such that the mobile dopants selectively form a conductive band (380) which connects a first signal electrode (330) to one of a plurality of second electrodes (350). A method for operating a multiplexing/de-multiplexing memristive device (300) includes applying a programming electrical field to achieve a first dopant configuration in a memristive matrix (370), the first dopant configuration connecting a base electrode (330) to a input/output electrode (350); conducting an electrical current from between the base electrode (330) and the input/output electrode (350); and applying a second programming electrical field to achieve a second dopant configuration, the second dopant configuration connecting the base electrode (330) to a second input/output electrode (350); and conducting an electrical current from the base electrode (330) to the second input/output electrode (360).
(FR) Le dispositif memristif multiplexeur/démultiplexeur (300) selon l'invention comprend une matrice memristive (370) contenant des dopants mobiles ; et des électrodes de programmation (310, 320) qui appliquent un champ électrique de programmation tel que les dopants mobiles forment sélectivement une bande conductrice (380) qui connecte une première électrode de signal (330) à un élément d'une pluralité de secondes électrodes (350). Un procédé d'utilisation d'un dispositif memristif multiplexeur/démultiplexeur (300) consiste à appliquer un champ électrique de programmation pour réaliser une première configuration de dopants dans une matrice memristive (370), la première configuration de dopants connectant une électrode de base (330) à une électrode d'entrée/sortie (350) ; à conduire un courant électrique entre l'électrode de base (330) et l'électrode d'entrée/sortie (350) ; et à appliquer un second champ électrique de programmation pour réaliser une seconde configuration de dopants, la seconde configuration de dopants connectant l'électrode de base (330) à une seconde électrode d'entrée/sortie (350) ; et à conduire un courant électrode depuis l'électrode de base (330) vers la seconde électrode d'entrée/sortie (360).
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
US20110188294