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1. (WO2010076929) LIGHT-EMITTING DEVICE HAVING AIR GAP LAYER AND MANUFACTURING METHOD THEREOF
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/076929 International Application No.: PCT/KR2009/002913
Publication Date: 08.07.2010 International Filing Date: 01.06.2009
IPC:
H01L 33/10 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
10
with a light reflecting structure, e.g. semiconductor Bragg reflector
Applicants:
전북대학교산학협력단 INDUSTRIAL COOPERATION FOUNDATION CHONBUK NATIONAL UNIVERSITY [KR/KR]; 전라북도 전주시 덕진구 덕진동 1가 664-14 본부별관 3층 3F. HQ Building Aneex 664-14 Deokjin-dong 1-ga Deokjin-gu, Jeonju-si Jeollabuk-do 561-756, KR (AllExceptUS)
홍창희 HONG, Chang Hee [KR/KR]; KR (UsOnly)
김형구 KIM, Hyung Gu [KR/KR]; KR (UsOnly)
Inventors:
홍창희 HONG, Chang Hee; KR
김형구 KIM, Hyung Gu; KR
Agent:
염홍서 YOM, Hong Seo; 서울특별시 서초구 서초동 1589-7 현대전원 오피스텔 12층 12th Fl, Hyundai Jeonwon Officetel 1589-7 Socho-dong, Socho-Gu Seoul 137-070, KR
Priority Data:
10-2008-013713330.12.2008KR
Title (EN) LIGHT-EMITTING DEVICE HAVING AIR GAP LAYER AND MANUFACTURING METHOD THEREOF
(FR) DISPOSITIF ÉLECTROLUMINESCENT COMPORTANT UNE COUCHE D'ENTREFER ET SON PROCÉDÉ DE FABRICATION
(KO) 에어갭층을 갖는 발광소자 및 그 제조방법
Abstract:
(EN) The present invention provides a light-emitting device including an air gap layer. The light-emitting device includes: a substrate, a semiconductor layer formed on the substrate, and the air gap layer formed in the semiconductor layer. The air gap layer can be formed in multi-layers. In addition, the invention provides a method for manufacturing the light-emitting device. Therefore, the invention is able to form a certain-shaped air gap through wet-etching. The air gap can improve light extraction efficiency by scattering the light progressing toward a sapphire plane among the lights generated in the semiconductor layer, wherein the light progression results from total internal reflection.
(FR) La présente invention concerne un dispositif électroluminescent comportant une couche d'entrefer. Le dispositif électroluminescent comporte : un substrat, une couche semi-conductrice formée sur le substrat, et la couche d'entrefer formée dans la couche semi-conductrice. La couche d'entrefer peut être formée en une pluralité de couches. En outre, l'invention concerne un procédé pour la fabrication du dispositif électroluminescent. Par conséquent, l'invention est capable de former un entrefer d'une certaine forme par gravure par voie humide. L'entrefer peut améliorer l'efficacité d'extraction de la lumière par la diffusion de la lumière se déplaçant vers un plan de saphir parmi les lumières générées dans la couche semi-conductrice, la progession de la lumière étant dérivée de la réflexion totale interne.
(KO) 본 발명은 에어갭을 구비하는 발광소자를 제공한다. 상기 발광 소자는 기판과, 상기 기판 상에 형성된 반도체층과, 상기 반도체 층 내에 형성된 에어갭을 포함한다. 상기 에어갭은 다층으로 형성될 수 있다. 또한, 본 발명은 상기 발광 소자의 제조 방법을 제공한다. 따라서, 본 발명은 습식식각을 통하여 일정한 모양의 에어갭을 형성할 수 있고, 상기 에어갭은 반도체층에서 생성된 광 중에서 내부 전반사로 인해 사파이어 면으로 진행하는 광을 산란시킴으로써, 광 추출 효율을 향상시킬 수 있다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)