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1. (WO2010076864) PIEZOELECTRIC ELEMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/076864 International Application No.: PCT/JP2009/070404
Publication Date: 08.07.2010 International Filing Date: 04.12.2009
IPC:
H01L 41/09 (2006.01) ,C23C 24/04 (2006.01) ,H01L 21/316 (2006.01) ,H01L 41/18 (2006.01) ,H01L 41/22 (2013.01) ,H01L 41/314 (2013.01) ,H01L 41/39 (2013.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
Piezo-electric or electrostrictive elements
09
with electrical input and mechanical output
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
24
Coating starting from inorganic powder
02
by application of pressure only
04
Impact or kinetic deposition of particles
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
16
Selection of materials
18
for piezo-electric or electrostrictive elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31
Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
314
by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41
Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22
Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
35
Forming piezo-electric or electrostrictive materials
39
Inorganic materials
Applicants:
ブラザー工業株式会社 BROTHER KOGYO KABUSHIKI KAISHA [JP/JP]; 愛知県名古屋市瑞穂区苗代町15番1号 15-1 Naeshiro-cho, Mizuho-ku, Nagoya-shi, Aichi 4678561, JP (AllExceptUS)
鶴子 昌宣 TSURUKO Masanori [JP/JP]; JP (UsOnly)
Inventors:
鶴子 昌宣 TSURUKO Masanori; JP
Agent:
益田 博文 MASUDA Hirofumi; JP
Priority Data:
2008-33578529.12.2008JP
Title (EN) PIEZOELECTRIC ELEMENT
(FR) ÉLÉMENT PIÉZOÉLECTRIQUE
(JA) 圧電素子
Abstract:
(EN) Provided is a laminated piezoelectric element which comprises thin films formed by the aerosol deposition method and yet shows little film detachment, and which has highly evaluated electrical properties and, therefore, can achieve an improved yield and excellent piezoelectric characteristics. A piezoelectric element having a four-layered structure comprising a first layer, a second layer and a third layer that are laminated in this order on a substrate, wherein the first, second and third layers are respectively ceramic films formed by the aerosol deposition method, and the modulus of elasticity of the first layer is greater than the modulus of elasticity of the second layer and the modulus of elasticity of the second layer is greater than the modulus of elasticity of the third layer.  Examples of the specific embodiment of the first layer/second layer/third layer include ZrO2/PZT/PZT, Al2O3/ZrO2/PZT and Al2O3/PZT/PZT.
(FR) L'invention concerne un élément piézoélectrique stratifié qui comprend des pellicules minces formée par le procédé de dépôt aérosol et présente cependant peu de détachement des pellicules, et qui présente des propriétés électriques hautement évaluées, et par conséquent permet d'obtenir un rendement amélioré et d'excellentes caractéristiques piézoélectriques. Elle concerne un élément piézoélectrique comportant une structure à quatre couches comprenant une première couche, une deuxième couche et une troisième couche qui sont stratifiées dans cet ordre sur un substrat, les première, deuxième et troisième couches étant respectivement des pellicules céramiques formées par le procédé de dépôt aérosol, et le module d'élasticité de la première couche étant supérieur au module d'élasticité de la deuxième couche et le module d'élasticité de la deuxième couche étant supérieur au module d'élasticité de la troisième couche. Des exemples du mode de réalisation spécifique de la première couche/deuxième couche/troisième couche comprennent ZrO2/PZT/PZT, Al2O3/ZrO2/PZT et Al2O3/PZT/PZT.
(JA) 【課題】エアロゾルデポジション法により形成された薄膜を有しながら、膜剥離が発生しにくく、電気評価が良好であるので歩留りが改善されるとともに、優れた圧電特性を達成できる積層型圧電素子を提供すること。 【解決手段】基板の上に、第一層、第二層、及び第三層がこの順序で積層された四層構造の圧電素子において、第一層、第二層、及び第三層は、それぞれがエアロゾルデポジション法によって成膜されたセラミックス膜であり、第一層の弾性率は第二層の弾性率よりも大きく、第二層の弾性率は第三層の弾性率よりも大きい。第一層/第二層/第三層の具体的態様としては、ZrO/PZT/PZT、Al/ZrO/PZT、Al/PZT/PZTがある。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)