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1. (WO2010075283) METHOD AND APPARATUS FOR PLASMA DOSE MEASUREMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/075283 International Application No.: PCT/US2009/068996
Publication Date: 01.07.2010 International Filing Date: 21.12.2009
IPC:
H01L 21/66 (2006.01) ,H01L 21/265 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66
Testing or measuring during manufacture or treatment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
Applicants:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES [US/US]; 35 Dory Road Gloucester, MA 01930, US (AllExceptUS)
DZENGELESKI, Joseph, P. [US/US]; US (UsOnly)
MILLER, Timothy, J. [US/US]; US (UsOnly)
SCHEUER, Jay, T. [US/US]; US (UsOnly)
LEAVITT, Christopher, J. [US/US]; US (UsOnly)
Inventors:
DZENGELESKI, Joseph, P.; US
MILLER, Timothy, J.; US
SCHEUER, Jay, T.; US
LEAVITT, Christopher, J.; US
Agent:
CHOI, Changhoon; Varian Semiconductor Equipment Associates, Inc. 35 Dory Road Gloucester, MA 01930, US
Priority Data:
12/342,26223.12.2008US
Title (EN) METHOD AND APPARATUS FOR PLASMA DOSE MEASUREMENT
(FR) PROCÉDÉ ET APPAREIL SERVANT À LA MESURE D'UNE DOSE DE PLASMA
Abstract:
(EN) An non-Faraday ion dose measurement device is positioned within a plasma process chamber and includes a sensor located above a workpiece within the chamber. The sensor is configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma implantation process. The sensor outputs a current signal proportional to the detected secondary electrons. A current circuit subtracts the detected secondary current generated from the sensor and subtracts it from a bias current supplied to the workpiece within the chamber. The difference between the currents provides a measurement of the ion dose current calculated in situ and during the implantation process.
(FR) L'invention concerne un dispositif de mesure d'une dose ionique non Faraday. Ce dispositif est placé à l'intérieur d'une chambre de traitement par plasma et comporte un capteur situé au-dessus d'une pièce à travailler se trouvant à l'intérieur de la chambre. Le capteur est conçu pour détecter le nombre d'électrons secondaires émis par une surface de la pièce à travailler soumise à un procédé d'implantation par plasma. Le capteur restitue un signal de courant proportionnel aux électrons secondaires détectés. Un circuit de courant soustrait le courant secondaire détecté généré par le capteur et le soustrait d'un courant de polarisation appliqué à la pièce à travailler se trouvant à l'intérieur de la chambre. La différence entre les courants fournit une mesure du courant de dose ionique calculé in situ et lors du procédé d'implantation.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
JP2012513678CN102257606KR1020110111418