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1. (WO2010075247) COMPOSITIONS AND PROCESSES FOR FORMING PHOTOVOLTAIC DEVICES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/075247 International Application No.: PCT/US2009/068914
Publication Date: 01.07.2010 International Filing Date: 21.12.2009
IPC:
H01L 31/0224 (2006.01) ,H01L 21/285 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
Applicants:
E. I. DU PONT DE NEMOURS AND COMPANY [US/US]; 1007 Market Street Wilmington, Delaware 19898, US (AllExceptUS)
NORTH CAROLINA STATE UNIVERSITY [US/US]; 920 Main Campus Drive Venture II Building Suite 400 Campus Box 8210 Raleigh, NC 27695-8210, US (AllExceptUS)
BORLAND, William [US/US]; US (UsOnly)
GLICKSMAN, Howard, David [US/US]; US (UsOnly)
MARIA, Jon-Paul [US/US]; US (UsOnly)
Inventors:
BORLAND, William; US
GLICKSMAN, Howard, David; US
MARIA, Jon-Paul; US
Agent:
GORMAN, Thomas, W.; E. I. du Pont de Nemours and Company Legal Patent Records Center 4417 Lancaster Pike Wilmington, Delaware 19805, US
Priority Data:
61/139,75822.12.2008US
Title (EN) COMPOSITIONS AND PROCESSES FOR FORMING PHOTOVOLTAIC DEVICES
(FR) COMPOSITIONS ET PROCESSUS DE FORMATION DE DISPOSITIFS PHOTOVOLTAÏQUES
Abstract:
(EN) Photovoltaic cells, including silicon solar cells, and methods and compositions for making such photovoltaic cells are provided. A silicon substrate having p-type silicon base and an n-type silicon layer is provided with a silicon nitride layer, an exchange metal in contact with the silicon nitride layer, and a non-exchange metal in contact with the exchange metal. This assembly is fired to form a metal silicide contact on the silicon substrate, and a conductive metal electrode in contact with the metal silicide contact. The exchange metal is from nickel, cobalt, iron, manganese, molybdenum, and combinations thereof, and the non-exchange metal is from silver, copper, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, gold, cadmium, berrylium, and combinations thereof.
(FR) L'invention concerne des cellules photovoltaïques, comprenant des cellules solaires au silicium, et des procédés et des compositions servant à réaliser de telles cellules photovoltaïques. Un substrat de silicium comportant une base de silicium de type p et une couche de silicium de type n comporte une couche de nitrure de silicium, un métal échangeur en contact avec la couche de nitrure de silicium et un métal non échangeur en contact avec le métal échangeur. L'ensemble est cuit pour former un contact en siliciure de métal sur le substrat de silicium et une électrode en métal conducteur en contact avec le contact en siliciure de métal. Le métal échangeur est sélectionné parmi le nickel, le cobalt, le fer, le manganèse, le molybdène et leurs combinaisons, et le métal non échangeur est sélectionné parmi l'argent, le cuivre, l'étain, le bismuth, le plomb, l'antimoine, l'arsenic, l'indium, le zinc, le germanium, l'or, le cadmium, le béryllium et leurs combinaisons.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP2380204JP2012513676CN102301485KR1020110101218