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1. (WO2010074987) LIGHT GENERATING DEVICE HAVING DOUBLE-SIDED WAVELENGTH CONVERTER
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WE CLAIM:

1. A multilayer semiconductor construction, comprising: a layered construction having at least three semiconductor layers grown together and having a first side and a second side, the at least three semiconductor layers comprising a first semiconductor photoluminescent element for generating light at a first converted wavelength and a second semiconductor photoluminescent element for generating light at a second converted wavelength different from the first converted wavelength, at least one of the first and second converted wavelengths being visible light, the first side of the layered construction being patterned from the first side, the second side of the layered construction being patterned from the second side.

2. A multilayer semiconductor construction as recited in claim 1 , wherein the first patterned side is etched and the second patterned side is etched.

3. A multilayer semiconductor construction as recited in claim 2, wherein the first etched side comprises etched portions having undercut etched edges and the second etched side comprises etched portions having undercut etched edges.

4. A multilayer semiconductor construction as recited in claim 1 , wherein the layered construction comprises layers of M-Vl semiconductor material.

5. A multilayer semiconductor construction as recited in claim 4, wherein the layers of M-Vl semiconductor material comprise at least one layer of a zinc-selenide based semiconductor.

6. A multilayer semiconductor construction as recited in claim 1 , wherein the first semiconductor photoluminescent element comprises at least two first semiconductor absorbing layers for absorbing light and a first semiconductor quantum well layer disposed between the at least two first semiconductor absorbing layers.

7. A multilayer semiconductor construction as recited in claim 6, wherein the second semiconductor photoluminescent element comprises at least two second semiconductor absorbing layers for absorbing light and a second semiconductor quantum well layer disposed between the at least two first semiconductor absorbing layers.

8. A multilayer semiconductor construction as recited in claim 1 , wherein at least one of the semiconductor layers comprises an etch stop layer that is relatively resistant to etching an adjacent semiconductor layer.

9. A multilayer semiconductor construction as recited in claim 1 , further comprising a substrate attached to the layered construction.

10. A multilayer semiconductor construction as recited in claim 9, wherein the substrate comprises an intermediate substrate.

11. A multilayer semiconductor construction as recited in claim 9, wherein the substrate comprises a semiconductor substrate.

12. A multilayer semiconductor construction as recited in claim 11 , wherein the semiconductor substrate comprises an InP substrate and the layered construction comprises layers of M-Vl semiconductor material.

13. A multilayer semiconductor construction as recited in claim 11 , wherein the layered construction is adhered to the substrate via an adhering layer.

14. A multilayer semiconductor construction as recited in claim 11 , wherein the layered construction is directly bonded to the substrate.

15. A multilayer semiconductor construction as recited in claim 11 , wherein the semiconductor substrate comprises an LED wafer.

16. A light generating device comprising: an electroluminescent element having an output side; and a semiconductor wavelength converter having a first side and a second side, the wavelength converter being attached to the output side of the electroluminescent element, the wavelength converter having a first etched pattern on the first side and a second etched pattern on the second side.

17. A device as recited in claim 16, wherein the wavelength converter comprises a first photoluminescent element and a second photoluminescent element, the first etched pattern being formed in the first photoluminescent element and the second etched pattern being formed in the second photoluminescent element.

18. A device as recited in claim 17, wherein the first photoluminescent element comprises a plurality of first potential wells disposed between absorbing semiconductor layers that absorb the light of the pump wavelength incident from the electroluminescent device, the first potential wells being capable of emitting light of the first wavelength.

19. A device as recited in claim 18, wherein the second photoluminescent element comprises a plurality of second potential wells disposed between absorbing semiconductor layers that absorb the light at the pump wavelength incident from the electroluminescent device, the second potential wells being capable of emitting light at the second wavelength.

20. A device as recited in claim 16, wherein the semiconductor wavelength converter comprises semiconductor layers of M-Vl semiconductor materials.

21. A device as recited in claim 20, wherein the wavelength converter comprises first and second photoluminescent elements, each of the first and second photoluminescent elements comprising a plurality of cadmium zinc selenide (CdZnSe) quantum wells disposed between absorbing layers of cadmium magnesium zinc selenide (CdMgZnSe).

22. A device as recited in claim 16, further comprising an adhesive layer disposed between the wavelength converter and the electroluminescent device, the adhesive layer attaching the wavelength converter to the electroluminescent device.

23. A device as recited in claim 16, wherein the wavelength converter is directly bonded to the electroluminescent device.

24. A device as recited in claim 16, wherein the wavelength converter comprises a first photoluminescent element grown epitaxially together with the second photoluminescent element, and a window layer and an etch stop layer grown epitaxially between the first and second photoluminescent elements.

25. A device as recited in claim 16, wherein the wavelength converter comprises a first photoluminescent element and a second photoluminescent element, the first photoluminescent element comprising a first semiconductor structure pointing in a first direction and the second photoluminescent element comprising a second semiconductor structure pointing in a second direction opposite the first direction.

26. A device as recited in claim 16, wherein the wavelength converter comprises a first photoluminescent element and a second photoluminescent element, the first photoluminescent element substantially overlying a first region of the electroluminescent device and substantially not overlying a second region of the electroluminescent device, the second photoluminescent element substantially overlying the second region of the electroluminescent device and substantially not overlying the first region of the electroluminescent device.

27. A device as recited in claim 16, wherein the electroluminescent element comprises an array of electroluminescent elements.

28. A device as recited in claim 27, wherein the semiconductor wavelength converter comprises an array of wavelength converters arranged with the array of electroluminescent elements.

29. A semiconductor construction comprising: an integrated stack of semiconductor layers forming a first photoluminescent element and a second photoluminescent element, the first and second photoluminescent elements capable of emitting light at first and second wavelengths respectively when illuminated by light at a common pump wavelength, the first photoluminescent element being patterned with at least a portion of the patterned first photoluminescent element having a first semiconductor structure having a different width at the top of the first semiconductor structure than at the base of the first semiconductor structure and the second photoluminescent element being patterned with at least a portion of the patterned second photoluminescent element having a second semiconductor structure having a different width at the top of the second semiconductor structure than at the base of the second semiconductor structure, the first and second semiconductor structures being subject to one of the following conditions: i) the tops of the first and second semiconductor structures being narrower than the respective bases of the first and second semiconductor structures and ii) the tops of the first and second semiconductor structures being respectively wider than the bases of the first and second semiconductor structures.

30. A semiconductor construction as recited in claim 29, wherein the integrated stack comprises layers of M-Vl semiconductor material.

31. A semiconductor construction as recited in claim 30, wherein the layers of M-Vl semiconductor material comprise at least one layer of a zinc-selenide based semiconductor.

32. A semiconductor construction as recited in claim 29, wherein the first semiconductor photoluminescent element comprises at least two first semiconductor absorbing layers for absorbing light and a first semiconductor quantum well layer disposed between the at least two first semiconductor absorbing layers.

33. A semiconductor construction as recited in claim 32, wherein the second semiconductor photoluminescent element comprises at least two second semiconductor absorbing layers for absorbing light and a second semiconductor quantum well layer disposed between the at least two first semiconductor absorbing layers.

34. A semiconductor construction as recited in claim 29, wherein the stack of semiconductor layers further comprises an etch stop layer that is relatively resistant to etching an adjacent semiconductor layer, the etch stop layer being disposed between the first and second photoluminescent elements.

35. A semiconductor construction as recited in claim 29, further comprising a semiconductor substrate attached to the stack of semiconductor layers.

36. A semiconductor construction as recited in claim 35, wherein the semiconductor substrate comprises an InP substrate and the stack of semiconductor layers comprises layers of M-Vl semiconductor material.

37. A semiconductor construction as recited in claim 35, wherein the stack of semiconductor layers is adhered to the substrate via an adhering layer.

38. A semiconductor construction as recited in claim 35, wherein the stack of semiconductor layers is directly bonded to the substrate.

39. A semiconductor construction as recited in claim 29, further comprising a first passivation layer disposed over the patterned first photoluminescent element.

40. A semiconductor construction as recited in claim 39, wherein the first passivation layer is planarized.

41. A semiconductor construction as recited in claim 40, further comprising a second passivation layer disposed over the patterned second photoluminescent element.

42. A semiconductor construction as recited in claim 41 , wherein the second passivation layer is planarized.

43. A light emitting device, comprising: an electroluminescent device capable of emitting light at a pump wavelength; a wavelength converter attached to the electroluminescent device, the wavelength converter comprising at least a first photoluminescent element and a second photoluminescent element patterned on a single semiconductor layer stack, the first and second photoluminescent elements capable of emitting light at first and second wavelengths respectively when illuminated by light at the pump wavelength, the first photoluminescent element substantially overlying a first region of the electroluminescent device and substantially not overlying a second region of the electroluminescent device, the second photoluminescent element substantially overlying the second region of the electroluminescent device and substantially not overlying the first region of the electroluminescent device.

44. A device as recited in claim 43, wherein the first photoluminescent element comprises at least a first potential well and the second photoluminescent element comprises at least a second potential well.

45. A device as recited in claim 44, wherein the first photoluminescent element comprises a plurality of first potential wells disposed between absorbing semiconductor layers that absorb the light of the pump wavelength incident from the electroluminescent device, the first potential wells being capable of emitting light of the first wavelength.

46. A device as recited in claim 45, wherein the second photoluminescent element comprises a plurality of second potential wells disposed between absorbing semiconductor layers that absorb the light at the pump wavelength incident from the electroluminescent device, the second potential wells being capable of emitting light at the second wavelength.

47. A device as recited in claim 43, wherein the first and second photoluminescent elements comprise M-Vl semiconductor materials.

48. A device as recited in claim 47, wherein the first and second photoluminescent elements each comprise a plurality of cadmium zinc selenide (CdZnSe) quantum wells disposed between absorbing layers of cadmium magnesium zinc selenide (CdMgZnSe).

49. A device as recited in claim 43, further comprising an adhesive layer disposed between the wavelength converter and the electroluminescent device, the adhesive layer attaching the wavelength converter to the electroluminescent device.

50. A device as recited in claim 43, wherein the wavelength converter is directly bonded to the electroluminescent device.

51. A device as recited in claim 43, wherein the first photoluminescent element is grown epitaxially together with the second photoluminescent element.

52. A device as recited in claim 51 , further comprising a window layer and an etch stop layer grown epitaxially between the first and second photoluminescent elements.

53. A device as recited in claim 43, wherein the first photoluminescent element comprises a first semiconductor structure pointing in a first direction and the second photoluminescent element comprises a second semiconductor structure pointing in a second direction opposite the first direction.

54. A device as recited in claim 43, wherein the wavelength converter has a first side and a second side, the first photoluminescent element having a first pattern on the first side, the first pattern being etched into the wavelength converter from the first side, and the second photoluminescent element having a second pattern on the second side, the second pattern being etched into the wavelength converter from the second side.

55. A device as recited in claim 43, wherein the electroluminescent device comprises an array of electroluminescent devices.

56. A device as recited in claim 55, wherein the semiconductor wavelength converter comprises an array of wavelength converters arranged with the array of electroluminescent devices.

57. A semiconductor wavelength converter comprising: an integral stack of semiconductor layers having a first side and a second side, a first pattern formed in a first photoluminescent element of the first side of the stack of semiconductor layers and a second pattern formed in a second photoluminescent element of the second side of the stack of semiconductor layers; and a first passivation layer disposed over the etched pattern of the first side.

58. A wavelength converter as recited in claim 57, wherein the first passivation layer is planarized.

59. A wavelength converter as recited in claim 57, further comprising a second passivation layer disposed over the etched pattern of the second side.

60. A wavelength converter as recited in claim 59, wherein the second passivation layer is planarized.

61. A wavelength converter as recited in claim 57, wherein the integral stack of semiconductor layers comprises a first photoluminescent element and a second photoluminescent element, and further comprising an etch stop layer between the first and second photoluminescent elements.

62. A wavelength converter as recited in claim 61 , wherein the first photoluminescent element comprises at least a first potential well and the second photoluminescent element comprises at least a second potential well.

63. A wavelength converter as recited in claim 61 , wherein the first photoluminescent element comprises a plurality of first potential wells disposed between absorbing semiconductor layers that absorb the light of the pump wavelength incident from the electroluminescent device, the first potential wells being capable of emitting light of the first wavelength.

64. A wavelength converter as recited in claim 63, wherein the second photoluminescent element comprises a plurality of second potential wells disposed between absorbing semiconductor layers that absorb the light at the pump wavelength incident from the electroluminescent device, the second potential wells being capable of emitting light at the second wavelength.

65. A wavelength converter as recited in claim 61 , wherein the first and second photoluminescent elements comprise M-Vl semiconductor materials.

66. A wavelength converter as recited in claim 65, wherein the first and second photoluminescent elements each comprise a plurality of cadmium zinc selenide (CdZnSe) quantum wells disposed between absorbing layers of cadmium magnesium zinc selenide (CdMgZnSe).

67. A wavelength converter as recited in claim 61 , wherein the first photoluminescent element is grown epitaxially together with the second photoluminescent element.

68. A wavelength converter as recited in claim 61 , further comprising at least one window layer between the first and second photoluminescent elements.

69. A wavelength converter as recited in claim 61 , wherein the first photoluminescent element comprises at least a first semiconductor structure pointing in a first orientation and the second photoluminescent element comprises at least a second semiconductor structure pointing in a second direction opposite the first direction.

70. A semiconductor wavelength converter comprising: an epitaxially grown stack of semiconductor layers including first and second photoluminescent elements and a window layer disposed between the first and second photoluminescent elements, the stack having at least a first region spaced laterally from the first and second photoluminescent elements, the first region comprising the window layer and non-epitaxial material disposed on first and second sides of the window layer.

71. A wavelength converter as recited in claim 70, wherein the non-epitaxial material disposed on the first side comprises a first passivation layer and the non-epitaxial material disposed on the second side comprises a second passivation layer.

72. A wavelength converter as recited in claim 70, wherein the stack of semiconductor layers further comprises an etch stop layer between the first and second photoluminescent elements.

73. A wavelength converter as recited in claim 70, wherein the first photoluminescent element comprises at least a first potential well and the second photoluminescent element comprises at least a second potential well.

74. A wavelength converter as recited in claim 70, wherein the first photoluminescent element comprises a plurality of first potential wells disposed between absorbing semiconductor layers that absorb the light of the pump wavelength incident from the electroluminescent device, the first potential wells being capable of emitting light of the first wavelength.

75. A wavelength converter as recited in claim 74, wherein the second photoluminescent element comprises a plurality of second potential wells disposed between absorbing semiconductor layers that absorb the light at the pump wavelength incident from the electroluminescent device, the second potential wells being capable of emitting light at the second wavelength.

76. A wavelength converter as recited in claim 70, wherein the first and second photoluminescent elements comprise M-Vl semiconductor materials.

77. A wavelength converter as recited in claim 76, wherein the first and second photoluminescent elements each comprise a plurality of cadmium zinc selenide (CdZnSe) quantum wells disposed between absorbing layers of cadmium magnesium zinc selenide (CdMgZnSe).

78. A wavelength converter as recited in claim 70, wherein the first photoluminescent element comprises at least a first semiconductor structure pointing in a first direction and the second photoluminescent element comprises a at least a second semiconductor structure pointing in a second direction opposite the first direction.

79. A light emitting device, comprising: an electroluminescent device capable of emitting light at a pump wavelength; and a wavelength converter attached to the electroluminescent device, the wavelength converter comprising at least a first photoluminescent element patterned on a semiconductor layer stack, the first photoluminescent capable of generating light at a first converted wavelength when illuminated by light of the pump wavelength, a window layer disposed in the stack to one side of the first photoluminescent element, the first photoluminescent element overlying a first region of the electroluminescent device, and the window layer overlying a second region of the electroluminescent device spaced laterally from the first region, the first photoluminescent element substantially not overlying the second region.

80. A device as recited in claim 79, wherein the wavelength converter further comprises a second photoluminescent element, the window layer being disposed between the first and second photoluminescent elements, the second photoluminescent element being capable of generating light at a second converted wavelength when illuminated by light at the pump wavelength, the second converted wavelength being different from the first converted wavelength, the second photoluminescent element overlying a third region of the electroluminescent device spaced laterally from the first and second regions, the second photoluminescent element substantially not overlying the second region.

81. A device as recited in claim 79, wherein the second photoluminescent element also overlies the first region.

82. A device as recited in claim 79, further comprising non-epitaxial material disposed on at least one side of the window layer overlying the second region.

83. A device as recited in claim 82, wherein the non-epitaxial material comprises a first passivation layer.

84. A device as recited in claim 80, wherein the semiconductor layer stack further comprises an etch stop layer between the first and second photoluminescent elements.

85. A device as recited in claim 79, wherein the first photoluminescent element comprises at least a first potential well.

86. A device as recited in claim 85, wherein the first photoluminescent element comprises a plurality of first potential wells disposed between absorbing semiconductor layers that absorb the light of the pump wavelength incident from the electroluminescent device, the first potential wells being capable of emitting light of the first converted wavelength.

87. A device as recited in claim 79, wherein the first photoluminescent element comprises M-Vl semiconductor materials.

88. A device as recited in claim 87, wherein the first photoluminescent element comprises a plurality of cadmium zinc selenide (CdZnSe) quantum wells disposed between absorbing layers of cadmium magnesium zinc selenide (CdMgZnSe).

89. A device as recited in claim 80, wherein the first photoluminescent element comprises at least a first semiconductor structure pointing in a first direction and the second photoluminescent element comprises at least a second semiconductor structure pointing in a second direction opposite the first direction.

90. A device as recited in claim 79, wherein the electroluminescent device comprises an array of electroluminescent devices.

91. A device as recited in claim 90, wherein the semiconductor wavelength converter comprises an array of wavelength converters arranged with the array of electroluminescent devices.