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1. (WO2010074956) DOPING OF LEAD-FREE SOLDER ALLOYS AND STRUCTURES FORMED THEREBY
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/074956 International Application No.: PCT/US2009/067113
Publication Date: 01.07.2010 International Filing Date: 08.12.2009
IPC:
H01L 21/60 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard MS: RNB-4-150 Santa Clara, California 95052, US (AllExceptUS)
PANG, Mengzhi [CN/US]; US (UsOnly)
GURUMURTHY, Charan [US/US]; US (UsOnly)
Inventors:
PANG, Mengzhi; US
GURUMURTHY, Charan; US
Agent:
VINCENT, Lester, J.; BLAKELY SOKOLOFF TAYLOR & ZAFMAN 1279 Oakmead Parkway Sunnyvale, California 94085, US
Priority Data:
12/317,59823.12.2008US
Title (EN) DOPING OF LEAD-FREE SOLDER ALLOYS AND STRUCTURES FORMED THEREBY
(FR) DOPAGE D'ALLIAGES DE BRASURE TENDRE SANS PLOMB ET STRUCTURES FORMÉES PAR CE MOYEN
Abstract:
(EN) Methods of forming a microelectronic structure are described. Those methods include doping a lead free solder material with nickel, wherein the nickel comprises up to about 0.2 percent by weight of the solder material, and then applying the solder material to a substrate comprising a copper pad.
(FR) La présente invention a trait à des procédés permettant de former une structure microélectronique. Ces procédés incluent une étape consistant à doper un matériau de brasure tendre sans plomb avec du nickel, lequel nickel comprend jusqu'à environ 0,2 pour cent en poids de matériau de brasure tendre, puis une étape consistant à appliquer le matériau de brasure tendre à un substrat comprenant une plage de connexion en cuivre.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
SG172368JP2012510184CN102171803RU2011130867RU0002492547KR1020110063813
BRPI0923647IN4828/DELNP/2011