Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2010074037) RUTHENIUM COMPOUND, PROCESS FOR PRODUCING SAME, PROCESS FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM USING SAME, AND RUTHENIUM-CONTAINING THIN FILM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/074037 International Application No.: PCT/JP2009/071256
Publication Date: 01.07.2010 International Filing Date: 21.12.2009
IPC:
C07F 17/02 (2006.01) ,C23C 16/18 (2006.01) ,H01L 21/28 (2006.01) ,H01L 21/285 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
17
Metallocenes
02
of metals of the iron group or the platinum group
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06
characterised by the deposition of metallic material
18
from metallo-organic compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
Applicants:
東ソー株式会社 TOSOH CORPORATION [JP/JP]; 山口県周南市開成町4560番地 4560, Kaisei-cho, Shunan-shi, Yamaguchi 7468501, JP (AllExceptUS)
古川 泰志 FURUKAWA Taishi [JP/JP]; JP (UsOnly)
大島 憲昭 OSHIMA Noriaki [JP/JP]; JP (UsOnly)
河野 和久 KAWANO Kazuhisa [JP/JP]; JP (UsOnly)
千葉 洋一 CHIBA Hirokazu [JP/JP]; JP (UsOnly)
Inventors:
古川 泰志 FURUKAWA Taishi; JP
大島 憲昭 OSHIMA Noriaki; JP
河野 和久 KAWANO Kazuhisa; JP
千葉 洋一 CHIBA Hirokazu; JP
Agent:
内藤 照雄 NAITO Teruo; 東京都港区西新橋一丁目7番13号 信栄特許事務所 Shin-Ei Patent Firm, 7-13, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1050003, JP
Priority Data:
2008-33117225.12.2008JP
Title (EN) RUTHENIUM COMPOUND, PROCESS FOR PRODUCING SAME, PROCESS FOR PRODUCING RUTHENIUM-CONTAINING THIN FILM USING SAME, AND RUTHENIUM-CONTAINING THIN FILM
(FR) COMPOSÉ DU RUTHÉNIUM, SON PROCÉDÉ DE FABRICATION, PROCÉDÉ DE FABRICATION D'UN FILM MINCE CONTENANT DU RUTHÉNIUM UTILISANT CE COMPOSÉ ET FILM MINCE CONTENANT DU RUTHÉNIUM
(JA) ルテニウム化合物、その製造方法、それを用いたルテニウム含有薄膜製造方法及びルテニウム含有薄膜
Abstract:
(EN) (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium from which a ruthenium-containing thin film can be produced even when the compound contains an analogous compound; a process for producing the ruthenium compound; a process for producing a ruthenium-containing thin film using said compound; and a ruthenium-containing thin film.  An analogous compound is separated from (2,4-dimethylpentadienyl)(ethylcyclopenta­dienyl)ruthenium containing the analogous compound to thereby obtain (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)­ruthenium in which the content of the analogous compound is 5 wt.% or lower.  This ruthenium compound is used as a raw material to produce a thin film.
(FR) L'invention concerne le (2,4-diméthylpentadiényl) (éthylcyclopentadiényl)ruthénium à partir duquel un film mince contenant du ruthénium peut être obtenu même lorsque le composé contient un composé analogue ; un procédé de fabrication du composé de ruthénium ; un procédé de fabrication d'un film mince contenant du ruthénium utilisant ledit composé ; et un film mince contenant du ruthénium. Un composé analogue est séparé du (2,4-diméthylpentadiényl) (éthylcyclopentadiényl)ruthénium contenant le composé analogue pour obtenir ainsi du (2,4-diméthylpentadiényl)(éthylcyclopentadiényl)-ruthénium dans lequel la teneur du composé analogue est d'au plus 5 % en poids. Ce composé du ruthénium est utilisé en tant que matière première de fabrication d'un film mince.
(JA)  本発明の課題は、類縁構造化合物を含有していてもルテニウム含有薄膜を製造することができる(2,4-ジメチルペンタジエニル)(エチルシクロペンタジエニル)ルテニウム、その製造方法、それを用いたルテニウム含有薄膜製造方法及びルテニウム含有薄膜等を提供することに係る。本発明は、類縁構造化合物を含有する(2,4-ジメチルペンタジエニル)(エチルシクロペンタジエニル)ルテニウムから、類縁構造化合物を分離することにより、5重量%以下の類縁構造化合物を含有する(2,4-ジメチルペンタジエニル)(エチルシクロペンタジエニル)ルテニウムを得て、それを原料として用いて薄膜を製造することに係る。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP2371832SG172302US20110224453CN102264754KR1020110105378KR1020150083140