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1. (WO2010074007) SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC INFORMATION DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/074007 International Application No.: PCT/JP2009/071180
Publication Date: 01.07.2010 International Filing Date: 18.12.2009
IPC:
H01L 27/146 (2006.01) ,G02B 5/20 (2006.01) ,H01L 27/14 (2006.01) ,H04N 5/335 (2011.01) ,H04N 5/369 (2011.01) ,H04N 5/374 (2011.01) ,H04N 9/07 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5
Optical elements other than lenses
20
Filters
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
374
Addressed sensors, e.g. MOS or CMOS sensors
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
9
Details of colour television systems
04
Picture signal generators
07
with one pick-up device only
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府大阪市阿倍野区長池町22番22号 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka 5458522, JP (AllExceptUS)
岩田 裕史 IWATA Hiroshi [JP/JP]; JP (UsOnly)
Inventors:
岩田 裕史 IWATA Hiroshi; JP
Agent:
山本 秀策 YAMAMOTO Shusaku; JP
Priority Data:
2008-32859224.12.2008JP
Title (EN) SOLID-STATE IMAGING ELEMENT, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC INFORMATION DEVICE
(FR) ELÉMENT DE FORMATION D'IMAGES À SEMI-CONDUCTEURS, SON PROCÉDÉ DE FABRICATION ET DISPOSITIF ÉLECTRONIQUE D'INFORMATIONS
(JA) 固体撮像素子およびその製造方法、電子情報機器
Abstract:
(EN) A color filter can be formed by a simple manufacturing method and a low-light-level sensitivity can be improved by applying a bias to a pixel separation electrode.  The solid-state imaging element includes a plurality of unit pixel portions arranged two-dimensionally on the front surface of the semiconductor substrate or the semiconductor layer and having light reception portions for generating signal charge when light is applied.  Adjacent unit pixel portions (6) are formed by the same color so as to ease the requirements for color filter alignment accuracy.  A pixel separation electrode (7) is formed in the adjacent unit pixel portions (6) so as to share the signal charge when a bias is applied in the low-light-level mode, thereby improving the effective photodiode area.
(FR) Un filtre coloré peut être formé par un procédé de fabrication simple et une sensibilité à faible niveau de lumière peut être améliorée par l'application d'une polarisation à une électrode de séparation de pixels. L'élément de formation d'images à semi-conducteurs comprend une pluralité de parties pixels unitaires disposées de façon bidimensionnelle sur la surface avant du substrat semi-conducteur ou sur la couche semi-conductrice et comporte des parties réception de lumière permettant de générer une charge de signal lorsqu'une lumière est appliquée. Des parties pixels unitaires adjacentes (6) sont formées par la même couleur de façon à faciliter les exigences pour une précision d'alignement du filtre coloré. Une électrode de séparation d'électrodes (7) est formée dans les parties pixels unitaires adjacentes (6) de façon à partager la charge de signal lorsqu'une tension est appliquée dans le mode faible niveau de lumière, ce qui améliore la surface efficace des photodiodes.
(JA) 簡易な製造方法でカラーフィルタを形成し、画素分離電極へのバイアス印加により低照度感度の向上を可能とする。半導体基板または半導体層の表面側に、光照射により信号電荷を発生する受光部を有する複数の単位画素部が二次元状に配設された固体撮像素子において、隣接単位画素部6を同色で形成することによりカラーフィルタのアライメント精度の緩和を行い、隣接単位画素部6内に画素分離電極7を形成して低照度時にバイアス印加による信号電荷の共有を行い、実効的なフォトダイオード面積を向上させることができる。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
US20120025060CN102334188IN4538/CHENP/2011