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1. (WO2010073897) VARIABLE RESISTANCE ELEMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/073897 International Application No.: PCT/JP2009/070469
Publication Date: 01.07.2010 International Filing Date: 07.12.2009
IPC:
H01L 27/10 (2006.01) ,H01L 45/00 (2006.01) ,H01L 49/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49
Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
Applicants:
日本電気株式会社 NEC CORPORATION [JP/JP]; 東京都港区芝五丁目7番1号 7-1,Shiba 5-chome,Minato-ku, Tokyo 1088001, JP (AllExceptUS)
迫坪 行広 SAKOTSUBO,Yukihiro [JP/JP]; JP (UsOnly)
寺井 真之 TERAI,Masayuki [JP/JP]; JP (UsOnly)
Inventors:
迫坪 行広 SAKOTSUBO,Yukihiro; JP
寺井 真之 TERAI,Masayuki; JP
Agent:
山川 政樹 YAMAKAWA, Masaki; JP
Priority Data:
2008-33316326.12.2008JP
Title (EN) VARIABLE RESISTANCE ELEMENT
(FR) ELÉMENT À RÉSISTANCE VARIABLE
(JA) 抵抗変化素子
Abstract:
(EN) A variable resistance element which comprises a lower electrode (101), an upper electrode (103) and a variable resistance layer (102) that is positioned between the lower electrode (101) and the upper electrode (103).  The variable resistance layer (102) comprises a nickel oxide layer (121) and an amorphous tantalum oxide layer (122) and the nickel oxide layer (121) is formed in such a manner as being in contact with the lower electrode (101).  Preferably, the tantalum oxide layer (122) has a stoichiometric composition.  Basically, the lower electrode (101) and the upper electrode (103) only need to be conductive.
(FR) La présente invention concerne un élément à résistance variable qui comprend une électrode inférieure (101), une électrode supérieure (103) et une couche à résistance variable (102) qui est positionnée entre l'électrode inférieure (101) et l'électrode supérieure (103). La couche à résistance variable (102) comprend une couche d'oxyde de nickel (121) et une couche d'oxyde de tantale amorphe (122), et la couche d'oxyde de nickel (121) est formée de façon à être en contact avec l'électrode inférieure (101). De préférence, la couche d'oxyde de tantale (122) possède une composition stœchiométrique. A la base, l'électrode inférieure (101) et l'électrode supérieure (103) ont seulement besoin d'être conductrices.
(JA)  下部電極(101)、上部電極(103)、および下部電極(101)と上部電極(103)とに挟まれた抵抗変化層(102)を備える。また、抵抗変化層(102)は、酸化ニッケル層(121)および非晶質の酸化タンタル層(122)を有し、酸化ニッケル層(121)は、下部電極(101)に接して形成されている。酸化タンタル層(122)は、ストイキオメトリックな組成であることが望ましい。下部電極(101)および上部電極(103)は、基本的に導電性を有していれば良い。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2010073897