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1. (WO2010073768) LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT ARRAY
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/073768 International Application No.: PCT/JP2009/063248
Publication Date: 01.07.2010 International Filing Date: 24.07.2009
Chapter 2 Demand Filed: 20.07.2010
IPC:
H01L 31/10 (2006.01) ,H01L 21/203 (2006.01) ,H01L 21/205 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203
using physical deposition, e.g. vacuum deposition, sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
Applicants:
住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES,LTD. [JP/JP]; 大阪府大阪市中央区北浜四丁目5番33号 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041, JP (AllExceptUS)
猪口 康博 IGUCHI, Yasuhiro [JP/JP]; JP (UsOnly)
三浦 広平 MIURA, Kohei [JP/JP]; JP (UsOnly)
稲田 博史 INADA, Hiroshi [JP/JP]; JP (UsOnly)
永井 陽一 NAGAI, Youichi [JP/JP]; JP (UsOnly)
Inventors:
猪口 康博 IGUCHI, Yasuhiro; JP
三浦 広平 MIURA, Kohei; JP
稲田 博史 INADA, Hiroshi; JP
永井 陽一 NAGAI, Youichi; JP
Agent:
中田 元己 NAKATA, Motomi; 大阪府大阪市此花区島屋一丁目1番3号 住友電気工業株式会社内 c/o Sumitomo Electric Industries, Ltd., 1-3, Shimaya 1-chome, Konohana-ku, Osaka-shi, Osaka 5540024, JP
Priority Data:
2008-33490726.12.2008JP
Title (EN) LIGHT-RECEIVING ELEMENT, LIGHT-RECEIVING ELEMENT ARRAY, METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT AND METHOD FOR MANUFACTURING LIGHT-RECEIVING ELEMENT ARRAY
(FR) ÉLÉMENT DE RÉCEPTION DE LUMIÈRE, RÉSEAU D'ÉLÉMENTS DE RÉCEPTION DE LUMIÈRE, PROCÉDÉ DE FABRICATION D'ÉLÉMENT DE RÉCEPTION DE LUMIÈRE ET PROCÉDÉ DE FABRICATION DE RÉSEAU D'ÉLÉMENTS DE RÉCEPTION DE LUMIÈRE
(JA) 受光素子、受光素子アレイおよびそれらの製造方法
Abstract:
(EN) Disclosed is a light-receiving element having a light-receiving sensitivity in the infrared region, wherein good crystallinity can be easily obtained.  The light-receiving element can decrease the dark current, and an one-dimensional or two-dimensional array of the light-receiving elements can be easily formed with high precision.  A light-receiving element array, a method for manufacturing the light-receiving element and a method for manufacturing the light-receiving element array are also disclosed. The light-receiving element has a group III-V compound semiconductor multilayer structure which contains a p-n junction (15) in a light-receiving layer (3).  The light-receiving element is characterized in that the light-receiving layer has a multiple quantum well structure of a group III-V compound semiconductor, the p-n junction (15) is formed by selectively dispersing an impurity element within the light-receiving layer, and the impurity concentration in the light-receiving layer is not more than 5 × 1016 cm-3.
(FR) L'invention porte sur un élément de réception de lumière ayant une sensibilité de réception de lumière dans la région infrarouge, dans lequel une bonne cristallinité peut être facilement obtenue. L'élément de réception de lumière peut diminuer le courant d'obscurité, et un réseau unidimensionnel ou bidimensionnel des éléments de réception de lumière peut être facilement formé avec une précision élevée. L'invention porte également sur un réseau d'éléments de réception de lumière, sur un procédé de fabrication de l'élément de réception de lumière et sur un procédé de fabrication du réseau d'éléments de réception de lumière. L'élément de réception de lumière a une structure multicouche de semi-conducteur composé des groupes III-V qui contient une jonction p-n (15) dans une couche de réception de lumière (3). L'élément de réception de lumière est caractérisé en ce que la couche de réception de lumière a une structure à multiples puits quantiques d'un semi-conducteur composé des groupes III-V, la jonction p-n (15) est formée par dispersion sélective d'un élément d'impureté dans la couche de réception de lumière, et la concentration en impureté dans la couche de réception de lumière n'est pas supérieure à 5 x 1016 cm-3.
(JA)  近赤外域に受光感度を有し、良好な結晶性を得やすく、かつ、その一次元または二次元アレイを、高精度で形成しやすく、暗電流を低くできる受光素子、受光素子アレイ、およびそれらの製造方法を提供する。 pn接合15を受光層3に含むIII-V族化合物半導体積層構造の受光素子であって、受光層がIII-V族化合物半導体の多重量子井戸構造を有し、pn接合15は、不純物元素が、受光層内に選択拡散されて形成されており、受光層における不純物濃度が、5×1016cm-3以下であることを特徴とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP2372787US20110140082US20120223290CN102265411KR1020110116120