Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2010073725) METHOD FOR WASHING POLYCRYSTALLINE SILICON, WASHING DEVICE, AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/073725 International Application No.: PCT/JP2009/007311
Publication Date: 01.07.2010 International Filing Date: 25.12.2009
IPC:
C30B 29/06 (2006.01) ,B08B 3/08 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
04
Cleaning involving contact with liquid
08
the liquid having chemical or dissolving effect
Applicants:
三菱マテリアル株式会社 MITSUBISHI MATERIALS CORPORATION [JP/JP]; 東京都千代田区大手町一丁目3番2号 3-2, Otemachi 1-chome, Chiyoda-ku, Tokyo 1008117, JP (AllExceptUS)
堺一弘 SAKAI, Kazuhiro [JP/JP]; JP (UsOnly)
渥美徹弥 ATSUMI, Tetsuya [JP/JP]; JP (UsOnly)
宮田幸和 MIYATA, Yukiyasu [JP/JP]; JP (UsOnly)
Inventors:
堺一弘 SAKAI, Kazuhiro; JP
渥美徹弥 ATSUMI, Tetsuya; JP
宮田幸和 MIYATA, Yukiyasu; JP
Agent:
志賀正武 SHIGA, Masatake; 東京都千代田区丸の内一丁目9番2号 1-9-2, Marunouchi, Chiyoda-ku, Tokyo 1006620, JP
Priority Data:
2008-33232026.12.2008JP
Title (EN) METHOD FOR WASHING POLYCRYSTALLINE SILICON, WASHING DEVICE, AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
(FR) PROCEDE DE LAVAGE DE SILICIUM POLYCRISTALLIN, DISPOSITIF DE LAVAGE ET PROCEDE DE PRODUCTION DE SILICIUM POLYCRISTALLIN
(JA) 多結晶シリコンの洗浄方法及び洗浄装置並びに多結晶シリコンの製造方法
Abstract:
(EN) Provided is a method for washing polycrystalline silicon comprising an acid rinsing step in which an acidic solution is used and a water rinsing step in which purified water is used after the acid rinsing. In the water rinsing step, the polycrystalline silicon is immersed in a water rinsing tank holding purified water and the purified water inside the water rinsing tank is replaced at least once in order to remove the acidic solution residue from the surface of the polycrystalline silicon. The electrical conductivity (C) of the purified water in the water rinsing tank is measured and the water rinsing step is judged to be completed on the basis of the measured electric conductivity (C).
(FR) L'invention concerne un procédé de lavage de silicium polycristallin, comprenant une étape de rinçage à l'acide consistant à utiliser une solution acide et une étape de rinçage à l'eau consistant à utiliser de l'eau purifiée après le rinçage à l'acide. Pendant l'étape de rinçage à l'eau, le silicium polycristallin est immergé dans une cuve de rinçage contenant de l'eau purifié et l'eau purifiée à l'intérieur de la cuve est remplacée au moins une fois pour éliminer le résidu de solution acide de la surface du silicium polycristallin. La conductivité électrique (C) de l'eau purifiée dans la cuve de rinçage à l'eau est mesurée et la fin de l'étape de rinçage à l'eau est déterminée en fonction de la conductivité électrique mesurée (C).
(JA)  酸液による酸洗工程と、この酸洗工程の後に純水で洗浄する水洗工程とを有する多結晶シリコンの洗浄方法であって、該水洗工程では、純水を貯留した水洗槽に前記多結晶シリコンを浸漬し、少なくとも1回以上前記水洗槽内の純水を入れ替えて、前記多結晶シリコンの表面に残留した前記酸液の除去を行うとともに、前記水洗槽中の純水の電気伝導度(C)を測定し、前記電気伝導度(C)の測定値によって前記水洗工程の終了を判断する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP2381017US20110253177CN102264957KR1020110081269MYPI 2011002948