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1. (WO2010073635) POWER CONVERTER
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/073635 International Application No.: PCT/JP2009/007139
Publication Date: 01.07.2010 International Filing Date: 22.12.2009
IPC:
H02M 7/48 (2007.01)
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
Applicants:
ダイキン工業株式会社 DAIKIN INDUSTRIES,LTD. [JP/JP]; 大阪府大阪市北区中崎西2丁目4番12号 梅田センタービル Umeda Center Bldg., 4-12, Nakazaki-nishi 2-chome, Kita-ku, Osaka-shi, Osaka 5308323, JP (AllExceptUS)
日比野寛 HIBINO, Hiroshi [JP/JP]; JP (UsOnly)
関本守満 SEKIMOTO, Morimitsu [JP/JP]; JP (UsOnly)
Inventors:
日比野寛 HIBINO, Hiroshi; JP
関本守満 SEKIMOTO, Morimitsu; JP
Agent:
前田弘 MAEDA, Hiroshi; 大阪府大阪市中央区本町2丁目5番7号 大阪丸紅ビル Osaka-Marubeni Bldg., 5-7, Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053, JP
Priority Data:
2008-33462126.12.2008JP
Title (EN) POWER CONVERTER
(FR) CONVERTISSEUR DE PUISSANCE
(JA) 電力変換装置
Abstract:
(EN) Semiconductor devices (11, 12) are a silicon device (11) having a relatively low allowable temperature and a wide band gap semiconductor device (12) having an allowable temperature higher than that of the silicon device (11).  The silicon device (11) and the wide band gap semiconductor device (12) are provided such that the devices dissipate, in the upstream of a forced circulation of a fluid, the heat generated from the silicon device (11), and dissipate, in the downstream of the forced circulation of the fluid, the heat generated from the wide band gap semiconductor device (12).
(FR) Selon l'invention, des dispositifs à semi-conducteur (11, 12) sont un dispositif au silicium (11) ayant une température admissible relativement basse et un dispositif à semi-conducteur à large bande interdite (12) ayant une température admissible supérieure à celle du dispositif au silicium (11). Le dispositif au silicium (11) et le dispositif à semi-conducteur à large bande interdite (12) sont installés de telle manière que les dispositifs dissipent, en amont d'une circulation forcée d'un fluide, la chaleur générée par le dispositif au silicium (11), et dissipent, en aval de la circulation forcée du fluide, la chaleur générée par le dispositif à semi-conducteur à large bande interdite (12).
(JA)  半導体デバイス(11,12)は、相対的に許容温度の低いシリコンデバイス(11)と該シリコンデバイス(11)よりも許容温度の高いワイドバンドギャップ半導体デバイス(12)とを有している。上記シリコンデバイス(11)及びワイドバンドギャップ半導体デバイス(12)は、該シリコンデバイス(11)で発生した熱を流体の強制対流の上流側で放熱し、該ワイドバンドギャップ半導体デバイス(12)で発生した熱を上記流体の強制対流の下流側で放熱するように設けられている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)