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1. (WO2010073532) PLASMA PROCESSING DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/073532 International Application No.: PCT/JP2009/006850
Publication Date: 01.07.2010 International Filing Date: 14.12.2009
Chapter 2 Demand Filed: 26.10.2010
IPC:
H05H 1/46 (2006.01) ,C23C 16/507 (2006.01) ,H01L 21/205 (2006.01) ,H01L 21/3065 (2006.01) ,H01L 21/31 (2006.01) ,H05H 1/00 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
505
using radio frequency discharges
507
using external electrodes, e.g. in tunnel type reactors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
Applicants:
株式会社メイコー MEIKO, INC. [JP/JP]; 山梨県甲斐市下今井732 732, Shimoimai, Kai-shi, Yamanashi 4000105, JP (AllExceptUS)
米山詩麻夫 YONEYAMA, Shimao [JP/JP]; JP (UsOnly)
Inventors:
米山詩麻夫 YONEYAMA, Shimao; JP
Agent:
大山浩明 OHYAMA, Hiroaki; 東京都港区赤坂六丁目2番14号 レオ赤坂ビル5階A Reo Akasaka Bldg. 5A, 2-14, Akasaka 6-chome, Minato-ku, Tokyo 1070052, JP
Priority Data:
2008-33178526.12.2008JP
Title (EN) PLASMA PROCESSING DEVICE
(FR) DISPOSITIF DE TRAITEMENT AU PLASMA
(JA) プラズマ処理装置
Abstract:
(EN) The plasma processing device is equipped with: a mounting base (110) on which a wafer is mounted; a gas supply unit (120) that introduces process gas into a process chamber (102); an exhaust unit (130) that exhausts and reduces the pressure in the process chamber; a planar high-frequency antenna (140) that is arranged facing the mounting base with a plate-type dielectric material (104) interposed therebetween; a shield member (160) provided to cover the high-frequency antenna; and a high-frequency power supply (150) that applies high-frequency waves to the high-frequency antenna to generate an inductively-coupled plasma between the mounting base and the plate-shaped dielectric material. The high-frequency antenna is comprised of antenna elements (142) which are configured such that both ends are open, with the center or the vicinity thereof being grounded, and to resonate at 1/2-wavelength of the high-frequency waves from the high-frequency power supply. Thus, a plasma with a low plasma potential and a more stable density can be formed easily in the process chamber.
(FR) La présente invention concerne un dispositif de traitement au plasma. Il comprend: une base de montage (110) sur laquelle est montée une plaquette; une alimentation en gaz (120) qui introduit dans une chambre de traitement (102) le gaz de traitement; une évacuation (130) qui évacue et réduit la pression dans la chambre de traitement; une antenne haute-fréquence plane (140) qui fait face à la base de montage dont elle est séparée par un matériau diélectrique (104); un écran (160) couvrant l'antenne haute-fréquence; et une alimentation électrique haute fréquence (150) qui applique à l'antenne haute-fréquence des ondes haute fréquence de façon à produire entre la base de montage et la plaque de matériau diélectrique un plasma inductif. L'antenne haute-fréquence est constituée d'éléments d'antenne (142) qui sont configurés, d'une part de façon que les deux extrémités soient ouvertes, le centre ou le voisinage du centre étant mis à la terre, et d'autre part à résonner à la demie longueur d'ondes des ondes haute-fréquence fournies par l'alimentation électrique haute-fréquence. L'invention permet de former ainsi plus facilement dans la chambre de traitement un plasma présentant un faible potentiel de plasma et une densité plus stable.
(JA)  ウエハを載置する載置台(110)と,処理室(102)内に処理ガスを導入するガス供給部(120)と,処理室内を排気して減圧する排気部(130)と,載置台に対向するように板状誘電体(104)を介して配設された平面状の高周波アンテナ(140)と,高周波アンテナを覆うように設けられたシールド部材(160)と,載置台と板状誘電体との間に誘導結合プラズマを生成するための高周波を高周波アンテナに印加する高周波電源(150)とを備え,高周波アンテナは両端を開放するとともに中点又はその近傍を接地し,高周波電源からの高周波の1/2波長で共振するように構成したアンテナ素子(142)からなる。これによって,プラズマ電位が低く,より安定した高密度のプラズマを処理室内に容易に形成する。(図1)
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)