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1. (WO2010073524) ORGANIC EL ELEMENT, ORGANIC EL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ORGANIC EL ELEMENT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/073524 International Application No.: PCT/JP2009/006813
Publication Date: 01.07.2010 International Filing Date: 11.12.2009
Chapter 2 Demand Filed: 30.04.2010
IPC:
H05B 33/24 (2006.01) ,G09F 9/30 (2006.01) ,H01L 27/32 (2006.01) ,H01L 51/50 (2006.01) ,H05B 33/10 (2006.01) ,H05B 33/12 (2006.01) ,H05B 33/22 (2006.01) ,H05B 33/26 (2006.01) ,H05B 33/28 (2006.01)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
22
characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
24
of metallic reflective layers
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
F
DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9
Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30
in which the desired character or characters are formed by combining individual elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32
with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
10
Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
22
characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
26
characterised by the composition or arrangement of the conductive material used as an electrode
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
26
characterised by the composition or arrangement of the conductive material used as an electrode
28
of translucent electrodes
Applicants:
パナソニック株式会社 PANASONIC CORPORATION [JP/JP]; 大阪府門真市大字門真1006番地 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
西山誠司 NISHIYAMA, Seiji; null (UsOnly)
太田高志 OHTA, Takashi; null (UsOnly)
Inventors:
西山誠司 NISHIYAMA, Seiji; null
太田高志 OHTA, Takashi; null
Agent:
新居広守 NII, Hiromori; 大阪府大阪市淀川区西中島5丁目3番10号タナカ・イトーピア新大阪ビル6階新居国際特許事務所内 c/o NII Patent Firm, 6F, Tanaka Ito Pia Shin-Osaka Bldg.,3-10, Nishi Nakajima 5-chome, Yodogawa-ku, Osaka-city, Osaka 5320011, JP
Priority Data:
2008-33420426.12.2008JP
Title (EN) ORGANIC EL ELEMENT, ORGANIC EL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ORGANIC EL ELEMENT
(FR) ÉLÉMENT ÉLECTROLUMINESCENT ORGANIQUE, DISPOSITIF D'AFFICHAGE EL ORGANIQUE, ET PROCÉDÉ DE FABRICATION DE CET ÉLÉMENT EL ORGANIQUE
(JA) 有機EL素子、有機EL表示装置および有機EL素子の製造方法
Abstract:
(EN) Disclosed is an organic EL element (10) comprising a light-reflecting layer (12) arranged on a substrate (11), a transparent electrode layer (13), an insulating layer (14), a photosensitive resin layer (16), and a light-emitting functional layer (19) which is isolated by the photosensitive resin layer (16).  When the thickness of the transparent electrode layer (13) is represented by d1, the thickness of a hole-transporting layer (15) is represented by d2, the thickness of the insulating layer (14) is represented by d3, the thickness of the photosensitive resin layer (16) is represented by d4, the refractive index of the transparent electrode layer (13) is represented by n1, the refractive index of the hole-transporting layer (15) is represented by n2, the refractive index of the insulating layer (14) is represented by n3, the refractive index of the photosensitive resin layer (16) is represented by n4, and a predetermined constant is represented by a, a specific wavelength λ satisfies the following formulae.       d1 = 1/n1 × 4.0a × λ/4       d2 = 1/n2 × 1.0a × λ/4       d3 = 1/n3 × 7.0a × λ/4       d4 = 1/n4 × 5.0a × λ/4
(FR) L'invention concerne un élément EL organique (10) comprenant une couche réfléchissant la lumière (12) disposée sur un substrat (11), une couche d'électrode transparente (13), une couche isolante (14), une couche de résine photosensible (16) et une couche fonctionnelle émettrice de lumière (19) qui est isolée par la couche de résine photosensible (16). Si l'épaisseur de la couche d'électrode transparente (13) est représentée par d1, l'épaisseur de la couche transportant des trous (15) est représentée par d2, l'épaisseur de la couche isolante (14) est représentée par d3, l'épaisseur de la couche de résine photosensible (16) est représentée par d4, l'indice de réfraction de la couche d'électrode transparente (13) est représenté par n1, l'indice de réfraction de la couche transportant des trous (15) est représente par n2, l'indice de réfraction de la couche isolante (14) est représenté par n3, l'indice de réfraction de la couche de résine photosensible (16) est représenté par n4 et une constante prédéterminée est représentée par a, une longueur d'onde spécifique λ satisfait les formules suivantes : d1 = 1/n1 × 4,0a × λ/4 d2 = 1/n2 × 1,0a × λ/4 d3 = 1/n3 × 7,0a × λ/4 d4 = 1/n4 × 5,0a × λ/4
(JA)  有機EL素子(10)は、基板(11)上に積層された光反射層(12)と、透明電極層(13)と、絶縁層(14)と、感光性樹脂層(16)と、感光性樹脂層(16)によって隔離された発光機能層(19)とを備え、透明電極層(13)の厚さがd1、正孔輸送層(15)の厚さがd2、絶縁層(14)の厚さがd3、感光性樹脂層(16)の厚さがd4であり、透明電極層(13)の屈折率がn1、正孔輸送層(15)の屈折率がn2、絶縁層(14)の屈折率がn3、感光性樹脂層(16)の屈折率がn4であり、所定の定数をaとするとき、特定の波長λについて d1=1/n1×4.0a×λ/4 d2=1/n2×1.0a×λ/4 d3=1/n3×7.0a×λ/4 d4=1/n4×5.0a×λ/4 を満たす。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2010073524CN102217421KR1020110106267