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1. (WO2010073520) SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/073520 International Application No.: PCT/JP2009/006773
Publication Date: 01.07.2010 International Filing Date: 10.12.2009
IPC:
H01L 27/14 (2006.01) ,H01L 25/065 (2006.01) ,H01L 25/07 (2006.01) ,H01L 25/18 (2006.01) ,H01L 27/148 (2006.01) ,H04N 5/378 (2011.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
065
the devices being of a type provided for in group H01L27/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
148
Charge coupled imagers
H ELECTRICITY
04
ELECTRIC COMMUNICATION TECHNIQUE
N
PICTORIAL COMMUNICATION, e.g. TELEVISION
5
Details of television systems
30
Transforming light or analogous information into electric information
335
using solid-state image sensors [SSIS]
369
SSIS architecture; Circuitry associated therewith
378
Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters
Applicants:
パナソニック株式会社 PANASONIC CORPORATION [JP/JP]; 大阪府門真市大字門真1006番地 1006, Oaza Kadoma, Kadoma-shi, Osaka 5718501, JP (AllExceptUS)
板倉啓二郎 ITAKURA, Keijirou; null (UsOnly)
桝山雅之 MASUYAMA, Masayuki; null (UsOnly)
Inventors:
板倉啓二郎 ITAKURA, Keijirou; null
桝山雅之 MASUYAMA, Masayuki; null
Agent:
前田弘 MAEDA, Hiroshi; 大阪府大阪市中央区本町2丁目5番7号 大阪丸紅ビル Osaka-Marubeni Bldg.,5-7,Hommachi 2-chome, Chuo-ku, Osaka-shi, Osaka 5410053, JP
Priority Data:
2008-33261526.12.2008JP
2009-21734818.09.2009JP
Title (EN) SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF DE FORMATION D'IMAGE À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(JA) 固体撮像デバイスおよびその製造方法
Abstract:
(EN) An imaging region (1a), in which unit pixels which include a photoelectric conversion element are arranged in a matrix shape, exists on the primary face of a solid-state imaging element (1). Peripheral circuit elements (3, 4) control the imaging operation of the solid-state imaging element (1) and process the video output signal of the solid-state imaging element (1). The imaging region (1a) is covered by a transparent material (2). The peripheral circuit elements (3, 4) are mounted on the primary face of the solid-state imaging element (1) in a region other than that of the imaging region (1a), and such that the primary faces of the peripheral circuit elements oppose the primary face of the solid-state imaging element (1).
(FR) Une région de formation d'image (1a) dans laquelle sont agencés des pixels élémentaires qui comprennent chacun un élément de conversion photoélectrique selon la forme d'une matrice, est présente sur la face primaire d'un élément de formation d'image à semi-conducteur (1). Des éléments de circuits périphériques (3, 4) commandent l'opération de formation d'image de l'élément de formation d'image à semi-conducteur (1) et traitent le signal de sortie vidéo de l'élément de formation d'image à semi-conducteur (1). La région de formation d'image (1a) est recouverte d'un matériau transparent (2). Les éléments de circuit périphérique (3, 4) sont montés sur la face principale de l'élément de formation d'image à semi-conducteur (1) dans une région autre que la région de formation d'image (1a), et de telle façon que les faces principales des éléments de circuit périphériques soient opposées à la face primaire de l'élément de formation d'image à semi-conducteur (1).
(JA)  固体撮像素子(1)は、光電変換素子を含む単位画素が行列状に形成された撮像領域(1a)を主面上に有している。周辺回路素子(3,4)は固体撮像素子(1)の撮像動作の制御、または、固体撮像素子(1)の映像出力の信号処理を行う。撮像領域(1a)は、透明材料(2)によって覆われている。周辺回路素子(3,4)は、固体撮像素子(1)の主面上における撮像領域(1a)以外の領域に、その主面が固体撮像素子(1)の主面と対向するように実装されている。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PE, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
JPWO2010073520