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1. (WO2010073358) METHOD AND DEVICE FOR MEASURING TEMPERATURE DURING DEPOSITION OF SEMICONDUCTOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2010/073358 International Application No.: PCT/JP2008/073702
Publication Date: 01.07.2010 International Filing Date: 26.12.2008
IPC:
H01L 21/205 (2006.01) ,G01K 11/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
G PHYSICS
01
MEASURING; TESTING
K
MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
11
Measuring temperature based on physical or chemical changes not covered by group G01K3/, G01K5/, G01K7/, or G01K9/202
12
using change of colour or translucency
Applicants:
有限会社ワイ・システムズ YSystems Ltd. [JP/JP]; 〒7710134 徳島県徳島市川内町平石住吉209-5 徳島健康科学総合センター Tokushima Tokushima Science Center, 209-5, HIRAISHI-SUMIYOSHI, KAWAUCHI-CHO, TOKUSHIMA-SHI, Tokushima 7710134, JP (AllExceptUS)
イーヴ ラクロワ Yves, Lacroix [CA/JP]; JP (UsOnly)
Inventors:
イーヴ ラクロワ Yves, Lacroix; JP
Agent:
野▲崎▼ 照夫 NOZAKI, Teruo; 〒1700013 東京都豊島区東池袋1-21-11 オーク池袋ビルディング3F Tokyo Oak Ikebukuro Building 3F 1-21-11 Higashi-Ikebukuro Toshima-ku, Tokyo 1700013, JP
Priority Data:
Title (EN) METHOD AND DEVICE FOR MEASURING TEMPERATURE DURING DEPOSITION OF SEMICONDUCTOR
(FR) PROCÉDÉ ET DISPOSITIF POUR MESURER LA TEMPÉRATURE PENDANT LE DÉPÔT DE SEMI-CONDUCTEUR
(JA) 半導体成膜時の温度測定方法および温度測定装置
Abstract:
(EN) Provided is a method and a device for measuring a temperature which can recognize the temperature of a semiconductor layer directly with high precision when the semiconductor layer is formed by deposition. The quantity of laser light transmitted a semiconductor layer is monitored by a photodetector by using laser light having a wavelength λs at which the transmittance of light changes abruptly when the temperature of the semiconductor layer reaches Ts during or after deposition. When heat being given to the semiconductor layer is changed, the quantity of laser light monitored by the photodetector changes abruptly when the temperature of the semiconductor layer reaches Ts at a time A, B or C. Consequently, the fact that the temperature of the semiconductor layer reached Ts at a time A, B or C can be recognized exactly, and an error in temperature information observed by a device for measuring temperature variations can be calibrated, for example.
(FR) La présente invention concerne un procédé et un dispositif de mesure de température permettant de reconnaître directement et avec une précision élevée la température d'une couche de semi-conducteur pendant la formation par dépôt de la couche de semi-conducteur. La quantité de lumière émise sur une couche de semi-conducteur est surveillée par un photodétecteur au moyen d'une lumière laser fonctionnant à une longueur d'ondes λs à laquelle le facteur de transmission de la lumière varie brutalement quand la couche de semi-conducteur atteint la température Ts, pendant ou après le dépôt. Lorsque la chaleur apportée à la couche de semi-conducteur varie, la quantité de lumière laser surveillée par le photodétecteur varie brutalement dès qu'à un instant A, B ou C, la couche de semi-conducteur atteint la température Ts. On arrive ainsi de savoir que la que la couche de semi-conducteur atteint exactement la température Ts à l'instant A, B ou C, ce qui permet de disposer d'une base pour le calcul d'erreur de l'information de température observée par un dispositif destiné à mesurer des variations de température.
(JA) 【課題】 半導体層を蒸着して成膜する際に、半導体層の温度を直接に高精度に知ることができる温度測定方法および温度測定方法を提供する。 【解決手段】 成膜中または成膜後の半導体層が温度Tsに至ったときに光の透過率が急激に変化する波長λsのレーザ光を使用し、このレーザ光の半導体層に対する透過量を光検出装置によってモニターする。半導体層に与える熱を変化させると、時刻AまたはBあるいはCにおいて半導体層の温度がTsに至ったときに前記光検出装置でモニターされるレーザ光の受光量が急激に変化する。そのため、時刻AまたはBあるいはCにおいて半導体層の温度がTsに至ったことを正確に知ることができ、例えば温度変化測定装置で観測された温度情報の誤差の較正などが可能になる。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BR, BW, BY, BZ, CA, CH, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PG, PH, PL, PT, RO, RS, RU, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LS, MW, MZ, NA, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
EP2372752JPWO2010073358US20110312107CN102318038CA2748240KR1020110115576
VN28234IN1415/MUMNP/2011