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1. WO2010055857 - SOI SUBSTRATE MANUFACTURING METHOD

Publication Number WO/2010/055857
Publication Date 20.05.2010
International Application No. PCT/JP2009/069208
International Filing Date 11.11.2009
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
CPC
H01L 21/76254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
76Making of isolation regions between components
762Dielectric regions ; , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
7624using semiconductor on insulator [SOI] technology
76251using bonding techniques
76254with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Applicants
  • 信越化学工業株式会社 SHIN-ETSU CHEMICAL CO., LTD. [JP]/[JP] (AllExceptUS)
  • 秋山昌次 AKIYAMA Shoji [JP]/[JP] (UsOnly)
  • 伊藤厚雄 ITO Atsuo [JP]/[JP] (UsOnly)
Inventors
  • 秋山昌次 AKIYAMA Shoji
  • 伊藤厚雄 ITO Atsuo
Agents
  • 奥山尚一 OKUYAMA Shoichi
Priority Data
2008-29028712.11.2008JP
2009-25685410.11.2009JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOI SUBSTRATE MANUFACTURING METHOD
(FR) PROCÉDÉ DE FABRICATION D’UN SUBSTRAT SOI
(JA) SOI基板の作製方法
Abstract
(EN)
Provided is an SOI substrate manufacturing method which, in this order, includes; a step of forming an ion implanted layer (2) by implanting ions into a silicon wafer (5) or a silicon wafer (5) provided with an oxide film (7); a step of performing surface activation treatment to the surface of a transparent insulating substrate and the surface of the ion-implanted silicon wafer and/or the surface of the ion-implanted silicon wafer provided with the oxide film; a step of bonding the silicon wafer (5) or the silicon wafer (5) provided with the oxide film (7) with the transparent insulating substrate (3); a step of obtaining a bonded body (6) by performing heat treatment to the bonded substrate at 150°C or higher but not higher than 350°C; and a step of forming an SOI layer (4) by making brittle the interface of the ion-implanted layer (2) by radiating visible light from the side of the transparent insulating substrate (3) of the bonded body (6) toward the ion-implanted layer (2) of the silicon wafer (5) or that of the silicon wafer (5) provided with the oxide film (7), and by transferring a silicon thin film onto the transparent insulating substrate (3).
(FR)
L’invention concerne un procédé de fabrication d’un substrat SOI qui comprend, dans cet ordre ;  une étape consistant à former une couche implantée d’ions (2) en implantant des ions dans une plaquette de silicium (5) ou une plaquette de silicium (5) comportant une pellicule d'oxyde (7) ; une étape consistant à réaliser un traitement d’activation de surface sur la surface d’un substrat isolant transparent et la surface de la plaquette de silicium implantée d’ions et/ou la surface de la plaquette de silicium implantée d’ions comportant une pellicule d’oxyde ; une étape consistant à lier la plaquette de silicium (5) ou la plaquette de silicium (5) comportant la pellicule d’oxyde (7) au substrat isolant transparent (3) ; une étape consistant à obtenir un corps fusionné (6) en soumettant le substrat lié à un traitement thermique à une température comprise entre 150 °C et 350 °C ; et une étape consistant à former une couche SOI (4) en rendant fragile l’interface de la couche implantée d’ions (2) en irradiant de la lumière visible depuis le côté du substrat isolant transparent (3) du corps fusionné (6) vers la couche implantée d’ions (2) de la plaquette de silicium (5) ou de celle de la plaquette de silicium (5) comportant la pellicule d’oxyde (7) et en transférant une pellicule mince de silicium sur le substrat isolant transparent (3).
(JA)
 シリコンウェーハ5もしくは酸化膜7付きシリコンウェーハ5にイオンを注入してイオン注入層2を形成する工程、前記透明絶縁性基板の前記表面、および、前記イオンを注入したシリコンウェーハもしくは酸化膜付きシリコンウェーハの前記表面の少なくとも一方の面に表面活性化処理を施す工程、前記シリコンウェーハ5もしくは酸化膜7付きシリコンウェーハ5と前記透明絶縁性基板3とを貼り合わせる工程、貼り合わせた基板に150℃以上350℃以下の熱処理を加え、接合体6を得る工程、前記接合体6の透明絶縁性基板3側から前記シリコンウェーハ5もしくは酸化膜7付きシリコンウェーハ5のイオン注入層2に向けて可視光を照射して前記イオン注入層2の界面を脆化し、シリコン薄膜を透明絶縁性基板3に転写しSOI層4を形成する工程をこの順に含むSOI基板の製造方法である。
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