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1. WO2010053964 - NOVEL VESSEL DESIGNS AND RELATIVE PLACEMENTS OF THE SOURCE MATERIAL AND SEED CRYSTALS WITH RESPECT TO THE VESSEL FOR THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS

Publication Number WO/2010/053964
Publication Date 14.05.2010
International Application No. PCT/US2009/063238
International Filing Date 04.11.2009
IPC
H01L 21/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CPC
C30B 29/38
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
38Nitrides
C30B 29/403
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
C30B 29/406
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
40AIIIBV compounds ; wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
403AIII-nitrides
406Gallium nitride
C30B 7/10
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
7Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
10by application of pressure, e.g. hydrothermal processes
C30B 7/105
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
7Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
10by application of pressure, e.g. hydrothermal processes
105using ammonia as solvent, i.e. ammonothermal processes
H01L 21/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Applicants
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US]/[US] (AllExceptUS)
  • PIMPUTKAR, Siddha [US]/[US] (UsOnly)
  • KAMBER, Derrick S. [US]/[US] (UsOnly)
  • SPECK, James S. [US]/[US] (UsOnly)
  • NAKAMURA, Shuji [US]/[US] (UsOnly)
Inventors
  • PIMPUTKAR, Siddha
  • KAMBER, Derrick S.
  • SPECK, James S.
  • NAKAMURA, Shuji
Agents
  • GATES, George H.
Priority Data
61/112,55207.11.2008US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) NOVEL VESSEL DESIGNS AND RELATIVE PLACEMENTS OF THE SOURCE MATERIAL AND SEED CRYSTALS WITH RESPECT TO THE VESSEL FOR THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
(FR) NOUVEAUX MODÈLES DE CUVE ET DISPOSITIONS RELATIVES DU MATÉRIAU SOURCE ET DES GERMES CRISTALLINS PAR RAPPORT À LA CUVE POUR LA CROISSANCE AMMONOTHERMALE DE CRISTAUX DE NITRURE DU GROUPE III
Abstract
(EN) Reactor designs for use in ammonothermal growth of group-Ill nitride crystals envision a different relative placement of source materials and seed crystals with respect to each other, and with respect to the vessel containing a solvent. This placement results in a difference in fluid dynamical flow patterns within the vessel.
(FR) L’invention concerne des modèles de réacteur pour une utilisation en croissance ammonothermale de cristaux de nitrure du groupe III, qui prévoient un placement relatif différent des matériaux source et des germes cristallins, entre eux et par rapport à la cuve contenant un solvant. Ce placement se traduit par une différence dans les motifs de circulation dynamique du fluide dans la cuve.
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