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1. WO2010050034 - PHOTOELECTRIC CONVERSION APPARATUS AND PROCESS FOR PRODUCING PHOTOELECTRIC CONVERSION APPARATUS

Publication Number WO/2010/050034
Publication Date 06.05.2010
International Application No. PCT/JP2008/069790
International Filing Date 30.10.2008
IPC
H01L 31/075 2012.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
075the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
H01L 31/04 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
CPC
C23C 16/24
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
24Deposition of silicon only
C23C 16/509
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
50using electric discharges
505using radio frequency discharges
509using internal electrodes
H01L 31/028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
028including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
H01L 31/03685
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0368including polycrystalline semiconductors
03682including only elements of Group IV of the Periodic System
03685including microcrystalline silicon, uc-Si
H01L 31/075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
075the potential barriers being only of the PIN type
H01L 31/076
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic [PV] conversion devices
06characterised by at least one potential-jump barrier or surface barrier
075the potential barriers being only of the PIN type
076Multiple junction or tandem solar cells
Applicants
  • 三菱重工業株式会社 MITSUBISHI HEAVY INDUSTRIES, LTD. [JP]/[JP] (AllExceptUS)
  • 西宮 立亨 NISHIMIYA, Tatsuyuki [JP]/[JP] (UsOnly)
  • 真島 浩 MASHIMA, Hiroshi [JP]/[JP] (UsOnly)
  • 宮原 弘臣 MIYAHARA, Hiroomi [JP]/[JP] (UsOnly)
  • 川村 啓介 KAWAMURA, Keisuke [JP]/[JP] (UsOnly)
  • 中野 要治 NAKANO, Youji [JP]/[JP] (UsOnly)
Inventors
  • 西宮 立亨 NISHIMIYA, Tatsuyuki
  • 真島 浩 MASHIMA, Hiroshi
  • 宮原 弘臣 MIYAHARA, Hiroomi
  • 川村 啓介 KAWAMURA, Keisuke
  • 中野 要治 NAKANO, Youji
Agents
  • 藤田 考晴 FUJITA, Takaharu
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PHOTOELECTRIC CONVERSION APPARATUS AND PROCESS FOR PRODUCING PHOTOELECTRIC CONVERSION APPARATUS
(FR) APPAREIL DE CONVERSION PHOTOÉLECTRIQUE ET PROCÉDÉ DE FABRICATION D'APPAREIL DE CONVERSION PHOTOÉLECTRIQUE
(JA) 光電変換装置及び光電変換装置の製造方法
Abstract
(EN)
This invention provides a photoelectric conversion apparatus (100) comprising a substrate (1) having a large area of not less than 1 m2 and a photoelectric conversion layer (3) including a crystalline silicon i layer (42) provided on the substrate (1). The photoelectric conversion apparatus (100) is characterized in that the crystalline silicon i layer (42) includes a region where the Raman peak ratio, which is a ratio of the Raman peak intensity of a crystalline silicon phase to the Raman peak intensity of a noncrystalline silicon phase within the substrate (1) plane, is in the range of not less than 3.5 and not more than 8.0, and the area ratio of a region, where the Raman peak ratio within the substrate (1) plane is not more than 2.5, is not more than 3%. Thus, a high-output photoelectric conversion apparatus can be realized by regulating the crystallinity of the crystalline silicon i layer to the crystallinity before the formation of a high-brightness reflection region, which can provide a high output, to specify the area ratio of the high-brightness reflection region.
(FR)
Cette invention porte sur un appareil de conversion photoélectrique (100) comprenant un substrat (1) ayant une surface importante de pas moins de 1 m2 et une couche de conversion photoélectrique (3) comprenant une couche de silicium cristallin i (42) disposée sur le substrat (1). L'appareil de conversion photoélectrique (100) est caractérisé en ce que la couche de silicium cristallin i (42) comprend une région dans laquelle le rapport de pic Raman, qui est un rapport de l'intensité de pic Raman d'une phase de silicium cristallin sur l'intensité de pic Raman d'une phase de silicium non cristallin dans le plan du substrat (1), se situe dans la plage de pas moins de 3,5 et de pas plus de 8,0, et le rapport de surface d'une région où le rapport de pic Raman dans le plan du substrat (1) n’est pas supérieur à 2,5, n’est pas plus grande que 3 %. Ainsi, un appareil de conversion photoélectrique à haut rendement peut être réalisé par la régulation de la cristallinité de la couche de silicium cristallin i par rapport à la cristallinité avant la formation d'une région de réflexion à brillance élevée, qui peut fournir un rendement élevé, pour spécifier le rapport de surface de la région de réflexion à brillance élevée.
(JA)
 1m以上の大面積基板(1)上に、結晶質シリコンi層(42)を含む光電変換層(3)を形成した光電変換装置(100)であって、前記結晶質シリコンi層(42)が、前記基板(1)面内における、非晶質シリコン相のラマンピーク強度に対する結晶質シリコン相のラマンピーク強度の比であるラマンピーク比が3.5以上8.0以下の範囲内である領域を含み、かつ、前記基板(1)面内での前記ラマンピーク比が2.5以下の範囲内である領域の面積割合が、3%以下であることを特徴とする。このように、結晶質シリコンi層の結晶性を高い出力が得られる高輝度反射領域が発生する前の結晶性に調整し、高輝度反射領域の面積割合を規定することにより、高出力を示す光電変換装置を実現する。
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