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1. WO2010033774 - BONDING ON SILICON SUBSTRATE HAVING A GROOVE

Publication Number WO/2010/033774
Publication Date 25.03.2010
International Application No. PCT/US2009/057433
International Filing Date 18.09.2009
IPC
H01L 21/60 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 41/053 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04of piezo-electric or electrostrictive elements
053Mounts, supports, enclosures or casings
CPC
H01L 21/52
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
52Mounting semiconductor bodies in containers
H01L 41/053
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04of piezo-electric or electrostrictive devices
053Mounts, supports, enclosures or casings
H01L 41/0973
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
09with electrical input and mechanical output ; , e.g. actuators, vibrators
0926using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
0973Membrane type
H01L 41/313
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
312by laminating or bonding of piezo-electric or electrostrictive bodies
313by metal fusing or with adhesives
Y10T 156/10
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
156Adhesive bonding and miscellaneous chemical manufacture
10Methods of surface bonding and/or assembly therefor
Y10T 29/42
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
29Metal working
42Piezoelectric device making
Applicants
  • FUJIFILM DIMATIX, INC. [US]/[US] (AllExceptUS)
  • MENZEL, Christoph [US]/[US] (UsOnly)
  • DEBRABANDER, Gregory [US]/[US] (UsOnly)
  • NISTORICA, Corina [RO]/[US] (UsOnly)
Inventors
  • MENZEL, Christoph
  • DEBRABANDER, Gregory
  • NISTORICA, Corina
Agents
  • GOREN, David J.
Priority Data
61/098,18718.09.2008US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) BONDING ON SILICON SUBSTRATE HAVING A GROOVE
(FR) LIAISON SUR UN SUBSTRAT DE SILICIUM COMPORTANT UN SILLON
Abstract
(EN) A method and apparatus for bonding on a silicon substrate are disclosed. An apparatus includes a membrane having a membrane surface, a groove in the membrane surface, a transducer having a transducer surface substantially parallel to the membrane surface, and an adhesive connecting the membrane surface to the transducer surface. The groove can be configured to permit flow of adhesive into and through the groove while minimizing voids or air gaps that could result from incomplete filling of the groove. Multiple grooves can be formed in the membrane surface and can be of uniform depth.
(FR) La présente invention concerne un procédé et un appareil de liaison d’un substrat de silicium. Un tel appareil comprend une membrane présentant une surface de membrane, un sillon dans la surface de la membrane, un transducteur comportant une surface de transducteur sensiblement parallèle à la surface de la membrane, et un adhésif connectant la surface de la membrane à la surface du transducteur. Le sillon peut être configuré pour permettre la circulation de l’adhésif dans et à travers le sillon tout en minimisant les vides ou poches d’air qui pourraient résulter d’un remplissage incomplet du sillon. Des sillons multiples peuvent être formés dans la surface de la membrane et peuvent être de profondeur uniforme.
Latest bibliographic data on file with the International Bureau