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1. WO2010033268 - METHOD AND SYSTEM FOR PRODUCING FILMS FOR DEVICES SUCH AS SOLAR CELLS FROM SEMICONDUCTOR POWDERS OR DUST

Publication Number WO/2010/033268
Publication Date 25.03.2010
International Application No. PCT/US2009/043447
International Filing Date 11.05.2009
IPC
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 21/0237
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
H01L 21/02381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02367Substrates
0237Materials
02373Group 14 semiconducting materials
02381Silicon, silicon germanium, germanium
H01L 21/02532
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02524Group 14 semiconducting materials
02532Silicon, silicon germanium, germanium
H01L 21/02562
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02551Group 12/16 materials
02562Tellurides
H01L 21/02568
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02518Deposited layers
02521Materials
02568Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
H01L 21/02667
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02656Special treatments
02664Aftertreatments
02667Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
Applicants
  • SRI INTERNATIONAL [US]/[US] (AllExceptUS)
  • SANJURJO, Angel [US]/[US] (UsOnly)
Inventors
  • SANJURJO, Angel
Agents
  • TONG, Kin-Wah
Priority Data
12/435,85905.05.2009US
61/098,51319.09.2008US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METHOD AND SYSTEM FOR PRODUCING FILMS FOR DEVICES SUCH AS SOLAR CELLS FROM SEMICONDUCTOR POWDERS OR DUST
(FR) PROCÉDÉ ET SYSTÈME DE PRODUCTION DE FILMS POUR DES DISPOSITIFS TELLES QUE DES CELLULES SOLAIRES À PARTIR DE POUDRES OU DE POUSSIÈRES SEMI-CONDUCTRICES
Abstract
(EN) The present invention relates generally to production of photoelectric grade films or cells from semiconductor powders or dust. In one embodiment, the present invention provides a method for producing a photoelectric grade film from a semiconductor powder. The method includes providing a substrate, coating the substrate with a layer of the semiconductor powder and moving the substrate with the layer of the semiconductor powder under an energy source at a predefined rate, wherein the predefined rate is sufficient to melt the semiconductor powder by the energy source and to cool the substrate such that substantially all impurities are moved to an edge of the substrate.
(FR) D’une manière générale, la présente invention concerne la production de films ou de cellules de qualité photoélectrique à partir de poudres ou des poussières semi-conductrices. Selon un mode de réalisation, la présente invention concerne un procédé de production de film de qualité photoélectrique à partir d’une poudre semi-conductrice. Le procédé comprend la mise à disposition d’un substrat, le revêtement du substrat avec une couche de la poudre semi-conductrice et le déplacement du substrat avec la couche de poudre semi-conductrice sous une source d’énergie à une vitesse prédéterminée, la vitesse prédéterminée étant suffisante pour la fusion de la poudre semi-conductrice par la source d’énergie et pour refroidir le substrat de sorte que pratiquement toutes les impuretés soient déplacées vers un bord du substrat.
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